Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T10:44:08.870Z Has data issue: false hasContentIssue false
  • English
  • Français

Channel Epitaxy of 3C-SiC on Si Substrates by CVD

Published online by Cambridge University Press:  11 February 2011

S. Nishino ,
Y. Okui ,
C. Jacob  and
S. Ohshima
S. Nishino
Affiliation:
Kyoto Institute of Technology, Department of Electronics and Information Science, Kyoto, Japan
Y. Okui
Affiliation:
Kyoto Institute of Technology, Department of Electronics and Information Science, Kyoto, Japan
C. Jacob
Affiliation:
Kyoto Institute of Technology, Department of Electronics and Information Science, Kyoto, Japan
S. Ohshima
Affiliation:
Kyoto Institute of Technology, Department of Electronics and Information Science, Kyoto, Japan
Get access

Abstract

Epitaxial growth of 3C-SiC on Si substrates has been studied for many years, however an important issue is how to reduce the high density of interfacial defects. Channel epitaxy is the growth of a film on small channeled windows and is related to selective growth. Channel epitaxy of 3C-SiC grown on the seed 3C-SiC previously deposited on patterned Si substrates was achieved via CVD using hexamethyldisilane (HMDS). The proper selection of mask materials was also key to achieve channel epitaxy. Thermal oxide, silicon nitride and thin SiC masks were tried. Thin SiC was an effective mask to achieve selective growth at 1350°C. Smooth surface morphology was observed on both the channel regions and the mask regions at the growth temperature of 1350°C. Scanning electron microscopy revealed coalescence of the laterally grown regions via channel epitaxial growth of 3C-SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K1.2
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Nishino, S., Powell, J.A. and Will, H.A. : Appl. Phys. Lett. 42 (1983) 460.Google Scholar
[2] Chang, Y.S., Naritsuka, S. and Nishinaga, T.: J. Crystal Growth, Vol. 192, (1998) 18–22.Google Scholar
[3] Jacob, C., Hong, M.H., Chung, J., Pirouz, P. and Nishino, S.: Materials Science Forum Vols. 338–342 (2000) 249.Google Scholar
[4] Saddow, S.E., Carter, G.E., Geil, B., Zheleva, T., Melnychuk, G., Okhuysen, M.E., Mazzola, M.S., Vispute, R.D., Derenge, M., Ervin, M., Jones, K.A.: Matl. Sci. For. 338–342 (2000), 245.Google Scholar
[5] Okui, Y., Jacob, C., Ohshima, S. and Nishino, S.: Materials Science Forum Vols. 389–393 (2002) 331.Google Scholar
[6] Jacob, C., Pirouz, P. and Nishino, S.: Mater. Sci. Forum Vols. 353–356 (2001), p. 127.Google Scholar
[7] Zheleva, T.S., Nam, O-H., Bremser, M.D. and Davis, R.F.: Appl. Phys. Lett. 71 (1997) 2472.Google Scholar
[8] Marchand, H., Ibbetson, J.P., Fini, P.T., Kosodoy, P., Keller, S., denBaars, S., Speck, J.S., Mishra, U.K.: Materials Internet Journal -Nitride Semiconductor Research 3 (1998), p. 3.Google Scholar
[9] Kidoguchi, I., Ishibashi, A., Sugahara, G‥, and Ban, Y. Appl. Phys. Lettters, vol. 76, No. 25, (2000) 3768–3770.Google Scholar
[10] Fini, P., Marchand, H., Ibettson, J.P., Moran, B., Zao, L., Denbaars, S.P., Speck, J.P., and Mishra, U.K., Mat. Res. Soc. symp. Proc. 572, (1999) 315.Google Scholar