Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T07:38:22.805Z Has data issue: false hasContentIssue false

The Challenge and Methods of TEM Cross-Sectioning of < 0.25 Micron Plugs

Published online by Cambridge University Press:  10 February 2011

C. Amy Hunt
Affiliation:
Accurel Systems-Materials Analysis Group, 785 Lucerne Dr., Sunnyvale, CA 94086
Yuhong Zhang
Affiliation:
Accurel Systems-Materials Analysis Group, 785 Lucerne Dr., Sunnyvale, CA 94086
David Su
Affiliation:
Accurel Systems-Materials Analysis Group, 785 Lucerne Dr., Sunnyvale, CA 94086
Get access

Abstract

Transmission electron microscopy (TEM) is a useful tool in process evaluation and failure analysis for semiconductor industries. A common focus of semiconductor TEM analyses is metalization vias (plugs) and it is often desirable to cross-section through a particular one. If the cross-sectional plane deviates away from the center of the plug, then the thin adhesion layer around the plug will be blurred by surrounding materials such as the inter-layer dielectric and the plug material. The importance of these constraints, along with the difficulty of precision sample preparation, has risen sharply as feature sizes have fallen to 0.25 μm and below. The suitability of common sample preparation techniques for these samples is evaluated.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Marcus, R. B. and Sheng, T. T., Transmission Electron Microscopy of Silicon VLSI Circuits and Structures, edited by John Wiley, New York, 1983 Google Scholar
2. Hunt, C. A., Proceedings for 23rd International Symposium Testing and Failure Analysis, 1997, p.13 Google Scholar
3. Williams, D. B. and Carter, C. B., Transmission Electron Microscopy. Imaging III (Plenum Press, New York 1996), Chapter 28 High-Resolution TEM10.1007/978-1-4757-2519-3Google Scholar
4. Benedict, J. P., Anderson, R. and Klepeis, S. J., Specimen Preparation for Transmission Electron Microscopy of Materials III, edited by Anderson, R. M., Tracy, B. and Bravman, J. (Mater. Res. Soc. Proc. 254, Pittsburgh, PA, 1992) pp. 121 Google Scholar
5. Humiston, H., Specimen Preparation for Transmission Electron Microscopy of Materials IV, edited by Anderson, R. M. and Walck, S. D. (Mater. Res. Soc. Proc. 480, Pittsburgh, PA, 1997) pp. 117 Google Scholar
6. Giannuzzi, L. A., et.al., Specimen Preparation for Transmission Electron Microscopy of Materials IV, edited by Anderson, R. M. and Walck, S. D. (Mater. Res. Soc. Proc. 480, Pittsburgh, PA, 1997) pp. 19 Google Scholar
7. Su, D.H-I, et.al., Specimen Preparation for Transmission Electron Microscopy of Materials IV, edited by Anderson, R. M. and Walck, S. D. (Mater. Res. Soc. Proc. 480, Pittsburgh, PA, 1997) pp. 105 Google Scholar
8. Sanborn, C. E. and Myers, S. A., Specimen Preparation for Transmission Electron Microscopy of Materials III, edited by Anderson, R. M., Tracy, B. and Bravman, J. (Mater. Res. Soc. Proc. 254, Pittsburgh, PA, 1992) pp. 239 Google Scholar