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Cathodoluminescence Study of V-defects in AlGaAs-based High-power Laser Bars

Published online by Cambridge University Press:  01 February 2011

Matthieu Pommies
Affiliation:
[email protected], Universidad de Valladolid, Fisica de la Materia Condensada, ETSII, Paseo del Cauce s/n, Valladolid, 47011, Spain, 34 983423191, 34 983423192
Manuel Avella
Affiliation:
[email protected], Universidad de Valladolid, Fisica de la Materia Condensada, ETSII, Paseo del Cauce s/n, Valladolid, 47011, Spain
Alonso Martin
Affiliation:
[email protected], Universidad de Valladolid, Fisica de la Materia Condensada, ETSII, Paseo del Cauce s/n, Valladolid, 47011, Spain
Juan Jimenez
Affiliation:
[email protected], Universidad de Valladolid, Fisica de la Materia Condensada, ETSII, Paseo del Cauce s/n, Valladolid, 47011, Spain
Myriam Oudart
Affiliation:
[email protected], Alcatel Thales, 3-5 lab, RD 128, Palaiseau, 91767, France
Julien Nagle
Affiliation:
[email protected], Thales Research and Technology, RD 128, Palaiseau, 91767, France
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Abstract

High-power semiconductor lasers are required to be more and more powerful, efficient and reliable for applications such as solid-state lasers pumping, materials processing, and thermal printing among others. The understanding of the degradation mechanisms is essential to improve the high power laser reliability. The highest power emission is achieved with multi-emitter laser cm-bars, which present problems related to packaging induced stress. A very harmful defect in this type of devices is the so-called V defect. We present herein a study of these defects using cathodoluminescence imaging, the role of packaging is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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