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Cathodoluminescence of Diamond-Like and Hydrogenated Amorphous Silicon Carbide Materials

Published online by Cambridge University Press:  25 February 2011

F. Alvarez ,
R.R. Koropecki ,
F. Fajardo ,
H.L. Fragnito  and
P.V. Santos
F. Alvarez
Affiliation:
Instituto de Fisica, UNICAMP, CP 6165, 13081, Campinas, SP, Brazil.
R.R. Koropecki
Affiliation:
Instituto de Fisica, UNICAMP, CP 6165, 13081, Campinas, SP, Brazil.
F. Fajardo
Affiliation:
Instituto de Fisica, UNICAMP, CP 6165, 13081, Campinas, SP, Brazil.
H.L. Fragnito
Affiliation:
Instituto de Fisica, UNICAMP, CP 6165, 13081, Campinas, SP, Brazil.
P.V. Santos
Affiliation:
Instituto de Fisica, UNICAMP, CP 6165, 13081, Campinas, SP, Brazil.
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Abstract

The room temperature cathodoluminescence (CL) of diamond-1ike materials produced by glow discharge is reported. The CL spectra of these samples (4 eV optical gap) display two bands located at 2.3 eV and 2.8 eV which are frequently found in natural and synthetic diamond. X-ray diffraction spectra (before electron bombardment) are identical to those obtained in natural powder diamond, confirming the existence of crystalline particles. The room temperature CL of phosphorous doped samples is also reported.

Structural changes in amorphous silicon carbide samples (3.0 eV optical gap) associated with electron bombardnent are presented and elucidated by IR studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 181
Copyright
Copyright © Materials Research Society 1990

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References

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