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Cathodoluminescence characterization of Si-doped orientation patterned GaAs crystals

Published online by Cambridge University Press:  19 April 2012

V. Hortelano ,
O. Martínez ,
J. Jiménez ,
M. Snure ,
C. Lynch  and
D. Bliss
V. Hortelano
Affiliation:
GdS OptronLab, Ed.i+d, paseo de Belén, 1, Universidad de Valladolid, Valladolid 47011, Spain
O. Martínez
Affiliation:
GdS OptronLab, Ed.i+d, paseo de Belén, 1, Universidad de Valladolid, Valladolid 47011, Spain
J. Jiménez
Affiliation:
GdS OptronLab, Ed.i+d, paseo de Belén, 1, Universidad de Valladolid, Valladolid 47011, Spain
M. Snure
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Wright Patterson AFB, Dayton OH, U.S.A
C. Lynch
Affiliation:
Photonic Products Group Inc, Northvale, NJ, U.S.A
D. Bliss
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Wright Patterson AFB, Dayton OH, U.S.A
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Abstract

Orientation patterned (OP)-GaAs crystals are attractive materiasl for mid-infrared and terahertz lasers sources, using non linear optics frequency conversion from shorter wavelength sources. The optical propagation losses are critical to the fabrication of these sources; among the causes of optical losses the generation of defects and the incorporation of impurities must play a relevant role. The control of the incorporation of impurities and defects is, therefore, crucial to improve the performance of the OP-GaAs crystals as non linear optical materials. We present herein a cathodoluminescence (CL) analysis of OP-GaAS crystals intentionally doped with Si, in order to understand the incorporation paths of Si in the OP-GaAs crystals.

Keywords

defectsIII-Vluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1396: Symposium O – Compound Semiconductors for Generating, Emitting and Manipulating Energy , 2012 , mrsf11-1396-o05-06
Copyright
Copyright © Materials Research Society 2012

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References

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