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Cathodoluminescence and Photoluminescence Spectroscopy Study of Low Temperature Molecular Beam Epitaxy GaAs

Published online by Cambridge University Press:  15 February 2011

R. Enrique Viturro ,
Michael R. Melloch  and
Jerry M. Woodall
R. Enrique Viturro
Affiliation:
Xerox Webster Research Center, 114-41D, Webster, NY 14580
Michael R. Melloch
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, IN 47907
Jerry M. Woodall
Affiliation:
IBM Research Division, P. O. Box 218, Yorktown Heights, NY 10598
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Abstract

We report a cathodoluminescence (CL) and photoluminescence (PL) study of molecular beam epitaxy grown GaAs at low substrate temperatures (LT GaAs), and semi-insulating LEC GaAs. The as grown LT GaAs material shows intense deep level emissions which can be associated with an excess concentration of Arsenic. These emissions subside with annealing for a few minutes at temperatures above 450 ° C. CL measurements clearly show an extremelly reduced concentration of traps in the post-growth 600 ° C annealed material. These results account for a diminished role of electronic point defects in controlling the insulative behavior of LT GaAs and strongly support the “buried” Schottky barrier model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 81
Copyright
Copyright © Materials Research Society 1992

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References

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