Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-09T06:33:34.575Z Has data issue: false hasContentIssue false
  • English
  • Français

Catalytic Growth of Semiconducting ZnO Nanowires by Reactive Evaporation Process

Published online by Cambridge University Press:  15 February 2011

Joodong Park ,
Han-Ho Choi  and
Rajiv K. Singh
Joodong Park
Affiliation:
Department of Materials Science and Engineering, University of Florida Gainesville FL 32611USA
Han-Ho Choi
Affiliation:
Department of Materials Science and Engineering, University of Florida Gainesville FL 32611USA
Rajiv K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida Gainesville FL 32611USA
Get access

Abstract

Reactive evaporation process was introduced as a simple technique for the fabrication of aligned ZnO nanowires on a Si (100) surface. Single crystalline ZnO nanowire arrays were successfully synthesized on Au coated Si substrates via a VLS growth mechanism. The diameter of ZnO nanowires were observed to vary from 40 nm to 150 nm and the ratio of length to diameter was observed to be larger than 30. The diameter of ZnO nanowires was controlled by changing the processing temperature and by the thickness of Au catalyst film. Green emission induced from singly ionized oxygen vacancies was generated from ZnO nanowires with the excitonic emission in UV range. Higher intensity of the green emission was observed in thinner nanowires, which is attributed to their higher surface-to-volume ratio. Aligned structure formation and size control of ZnO nanowires could provide the potential for various nano-scale device applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 776: Symposium Q – Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing , 2003 , Q7.10
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Iijima, S., Nature, 354, 56 (1991).Google Scholar
2. Huang, M. H., Mao, S., Feick, H., Yan, H., Wu, Y., Kind, H., Weber, E., Russo, R., Yang, P., Science, 292, 1897 (2001).Google Scholar
3. Li, J. Y., Chen, X. L., Li, H., He, M., Qiao, Z. Y., J. CrystalGrowth, 233, 5 (2001).Google Scholar
4. Pan, Z. W., Dai, Z. R., Wang, Z. L., Science, 291, 1947 (2001).Google Scholar
5. Wu, J., Liu, S., Wu, C.,Chen, K., Chen, L., Appl. Phys. Lett., 81, 1312 (2002).Google Scholar
6. Yao, B. D., Chan, Y. F., Wang, N., Appl. Phys. Lett., 81, 757 (2002).Google Scholar
7. Govender, K., Boyle, D. S., O'Brien, P., Binks, D., West, D., Coleman, D., Adv. Mater., 14, 1221 (2002).Google Scholar
8. Li, Y., Meng, G. W., Zhang, L. D., Phillipp, F.,Appl. Phys. Lett., 76, 2011 (2000).Google Scholar
9. Wu, J., Liu, S., Adv. Mater, 14, 215 (2002).Google Scholar
10. Park, W. I., Kim, D. H., Jung, S. W., Yi, G. C., Appl. Phys. Lett., 80, 4232 (2002).Google Scholar
11. Zhang, J., Yu, W., Zhang, L., Phys. Lett. A, 299, 276 (2002).Google Scholar
12. Huang, M. H., Wu, Y., Feick, H., Tran, N., Weber, E., Yang, P., Adv.Mater., 13, 113 (2002).Google Scholar
13. Wagner, R. S., Ellis, W. C., Appl. Phys. Lett., 4, 89 (1964).Google Scholar
14. Hopfield, J., J. Appl. Phys. Chem. Solids, 10, 110 (1959).Google Scholar
15. Vanheusden, K., Warren, W. L., Seager, C. H., Tallant, D. R., Voigt, J. A., J. Appl. Phys., 79, 7983 (1996).Google Scholar