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Catalytic Chemical Vapor Deposition (CTL-CVD) Method to Obtain High Quality Amorphous Silicon Alloys

Published online by Cambridge University Press:  26 February 2011

Hideki Matsujmura
Hideki Matsujmura*
Affiliation:
Department of Physical Electronics, Hiroshima University, Saijo, Higashi-Hiroshima 724, JAPAN
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Abstract

A catalytic chemical vapor deposition (CTL-CVD) method, by which amorphous films are deposited at low temperatures only by using the catalytic or pyrolytic reactions but not by using plasma, is applied to produce amorphous silicon (a-Si) and a-Si alloys such as amorphous silicon germanium (a-SiGe), silicon carbide (a-Sic) and silicon nitride (a-SiNx). It is found that the CTL-CVD method is useful not only to produce a-Si but also to obtain high quality a-Si alloys. For instance, the photoconductivity of CTL-CVD a-SiGe of the optical band gap of 1.40 to 1.45 eV is 10−5 to 10−4 (Scm−1 ) for AM-1 of 100 mW/cm2 , keeping the photosensitivity over 104.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 43
Copyright
Copyright © Materials Research Society 1988

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