Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T02:24:50.301Z Has data issue: false hasContentIssue false

Catalyst formation and growth of Sn- and In-catalyzed silicon nanowires

Published online by Cambridge University Press:  01 February 2011

Irene Ngo
Affiliation:
[email protected], Laboratoire de Génie Electrique de Paris, Gif sur Yvette, France
Benedict O'Donnell
Affiliation:
[email protected], LPICM, Ecole Polytechnique/CNRS, LPICM, 91128 PALAISEAU CEDEX, Paris, Palaiseau, 91128, France, 0613072496
José Alvarez
Affiliation:
[email protected], Laboratoire de Génie Electrique de Paris, Gif sur Yvette, France
Marie Gueunier-Farret
Affiliation:
[email protected], Laboratoire de Génie Electrique de Paris, Gif sur Yvette, France
Jean-Paul Kleider
Affiliation:
[email protected], Laboratoire de Génie Electrique de Paris, Gif sur Yvette, France
Linwei Yu
Affiliation:
[email protected], LPICM, Ecole Polytechnique/CNRS, LPICM, 91128 PALAISEAU CEDEX, Paris, Palaiseau, 91128, France, 0613072496
Pere Roca i Cabarrocas
Affiliation:
[email protected], LPICM, Ecole Polytechnique/CNRS, LPICM, 91128 PALAISEAU CEDEX, Paris, Palaiseau, 91128, France, 0613072496
Get access

Abstract

Silicon nanowires (Si NWs) were grown directly on transparent conductive oxide layers using a single pump down process in a plasma enhanced chemical vapour deposition (PECVD) system. Layers of ITO and SnO2 on glass substrates were exposed to a hydrogen plasma leading to the reduction of the oxide and to the agglomeration of the metal into catalyst droplets of a few tens of nanometers diameter. The diameter and the density of the nanowires depend on the catalysts droplets size and density, we studied step by step the evolution of the surface prior to and at the initial stage of the nanowire growth. The catalyst droplets size and distribution were essentially investigated through Scanning Electron Microscopy (SEM).

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Kelzenberg, M.D. Boettcher, S.W. Petykiewicz, J.A. et al., Nature Mat. 9 (2010)Google Scholar
2 Wagner, R.S. and Ellis, W.C. Appl. Phys. Lett. 4, 8990 (1964)Google Scholar
3 Schmidt, V. Witteman, J.V. and Gösele, U., Chem. Rev. 110, 361388 (2010)Google Scholar
4 Nebol'sin, V.A. and Shschetinin, A.A. Inorg. Mater. 39 (9), 899903 (2003)10.1023/A:1025588601262Google Scholar
5 Alet, P-J. Yu, L. Patriarche, G. Palacin, S. and Cabarrocas, P. Roca i, J. Mater. Chem. 18, 51875189 (2008)10.1039/b813046aGoogle Scholar
6 Yu, L., Alet, P-J. Picardi, G. Maurin, I. and Cabarrocas, P. Roca i, Nanotechnology 19, 485605 (2008)10.1088/0957-4484/19/48/485605Google Scholar
7 Alet, P-J. PhD Thesis, Ecole Polytechnique, 2008 Google Scholar
8 Lan, J-H. and Kanicki, J., Thin Solid Film 304, 123129 (1997)10.1016/S0040-6090(97)00173-9Google Scholar
9 Merkulov, V.I. Lowndes, D.H. Wei, Y.Y. and Eres, G.., Appl. Phys. Lett. 76 24 (2000)Google Scholar
10 Giridhar, M. and McCoy, B.J. Phys. Chem. Chem. Phys. 5, 54565466 (2003)Google Scholar
11 Yang, D.Q. and Sacher, E. Surf. Sci. 516, 43 (2002)Google Scholar
12 Jeon, M. Uchiyama, H. and Kamisako, K. Mater. Lett. 63, 246248 (2009)10.1016/j.matlet.2008.10.005Google Scholar
13 Yu, L., O'Donnell, B., Alet, P-J. Conesa-Boj, S., Peiro, F. Arbiol, J. and Cabarrocas, P. Roca i, Nanotechnology 20, 225604 (2009)Google Scholar
14 Carey, J.D. Ong, L.L. and Silva, S.R.P. Nanotechnology 10, 12231227 (2003)10.1088/0957-4484/14/11/011Google Scholar
15 Kalache, B. Cabarrocas, P. Roca i and Morral, A. Fontcuberta i, Jpn. J. Appl. Phys. 45, 190193 (2006)10.1143/JJAP.45.L190Google Scholar
16 Iacopii, F., Vereecken, P.M. Schaekers, M. Caymax, M. Moelans, N. Blanpain, B. Richard, O. Detavernier, C. and Griffiths, H. Nanotechnology 18, 505307 (2007)Google Scholar
17 José-Yacaman, M. J., Gutierrez-Wing, C., Miki, M. Piyakis, K.N. and Sacher, E. Phys. Chem. B 109 (19), 97039711 (2005)Google Scholar
18 Bower, C. Zhou, O. Zhu, W. Werder, D.J. and Jin, S. Appl. Phys. Lett. 77, 17 (2000)Google Scholar