Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T18:50:57.841Z Has data issue: false hasContentIssue false
  • English
  • Français

Carrier-Induced Changes in The Gap States of Undoped a-Si:H Films

Published online by Cambridge University Press:  15 February 2011

Y. E. Chen ,
J. W. Tsai  and
H. C. Cheng
Y. E. Chen
Affiliation:
Dept. of Electronics Engineering, National Chiao-Tung Univ.; Hsinchu, Taiwan, ROC
J. W. Tsai
Affiliation:
Dept. of Electronics Engineering, National Chiao-Tung Univ.; Hsinchu, Taiwan, ROC
H. C. Cheng
Affiliation:
Dept. of Electronics Engineering, National Chiao-Tung Univ.; Hsinchu, Taiwan, ROC
Get access

Abstract

Carrier-induced changes in the gap states of plasma-enhanced-chemical-vapor-deposited (PECVD) undoped a-Si:H films are systematically studied using isothermal capacitance transient spectroscopy (ICTS) method via the novel structure we proposed previously. The density-of-state distribution g (E) and the energy dependence of electron-capture cross section σn (E) of gap states in undoped a-Si:H films before and after injection of electrons are directly measured for the first time. Experimental results show that the density of g (E) increases but the σn (E) has no obvious change after the electron injection. These indicate that the defects created during the electron injection are the same in type as those of the as-deposited films. In addition, it is found the shape of g (E) distorts after the injection, implying that the gap states with different energy levels are associated with distinct types of defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 379
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Staebler, D.L. and Wronski, C.R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
2. Staebler, D.L. and Wronski, C.R., J. Appl. Phys. 51, 3262 (1980).Google Scholar
3. Lang, D.V., Cohen, J.D., and Harbison, J.P., Phys. Rev. Lett. 48, 421 (1982).Google Scholar
4. AR Hepburn, Marshall, J.M., Main, C., Powell, M.J., and van Berkei, C., Phys. Rev. Lett. 56, 2215 (1986).Google Scholar
5. Jackson, W.B. and Moyer, D.M., Phys. Rev. B36, 6217 (1987).Google Scholar
6. Schropp, R.E.I. and Verwey, J.F., Appl. Phys. Lett. 50, 185 (1987).Google Scholar
7. Chen, Y.E., Wang, F.S., Tsai, J.W. and Cheng, H. C., Jpn. J. Appl. Phys. 33, 6727 (1994).Google Scholar
8. Chen, Y.E., Wang, F.S., Tsai, J.W. and Cheng, H. C., Jpn. J. Appl. Phys. 34, L268 (1995).Google Scholar
9. Smith, Z E., Aljishi, S., Shen, D-S., Chu, V., Slobodin, D., and Wagner, S., in Stability of Amorphous Silicon Alloy Materials and Devices. Palo Alto, 1987, ATP Conf. Proc. 157, edited by Stafford, B.L. and Sabisky, E. (AIP, New York, 1987), p. 171.Google Scholar
10. Müller, G., Kalbitzer, S. and Mannsperger, H., Appl. Phys. A 39, 243 (1986).Google Scholar
11. Müller, G., Appl. Phys. A 45, 41 (1988).Google Scholar
12. Müller, G., Appl. Phys. A 45, 103 (1988).Google Scholar
13. Smith, Z E. and Wagner, S., in Amorphous Silicon and Related Materials, edited by Fritzsche, H. (World Scientific, Singapore, 1989), p. 409.Google Scholar