Published online by Cambridge University Press: 26 February 2011
Protons and deuterons have been implanted in n+ GaAs:Si epilayers. Localized vibrational modes (LVM's) associated to H- and D-related defects are observed in the as-implanted samples and they account presumably for the carrier removal in the compensated region, but a small concentration of Si-H passivating centers is already present. LVM spectroscopy shows that after a 200° C annealing, passivation predominates over compensation while a 400° C annealing extends partial passivation throughout the layer.