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Carrier Removal in n+ GaAs:Si by Proton Implantation. a Spectroscopic Study

Published online by Cambridge University Press:  26 February 2011

B. Pajot ,
J. Chevallier ,
A. Chaumont  and
R. Azoulay
B. Pajot
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure, Université Paris VII, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
J. Chevallier
Affiliation:
Laboratoire de Physique des Solides, C.N.R.S., 1 place A. Briand, 92190 Bellevue, France
A. Chaumont
Affiliation:
C.S.N.S.M., Bât. 104-106, 91405 Campus d'Orsay, France
R. Azoulay
Affiliation:
C.N.E.T., 196 rue de Paris, 92220 Bagneux, France
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Abstract

Protons and deuterons have been implanted in n+ GaAs:Si epilayers. Localized vibrational modes (LVM's) associated to H- and D-related defects are observed in the as-implanted samples and they account presumably for the carrier removal in the compensated region, but a small concentration of Si-H passivating centers is already present. LVM spectroscopy shows that after a 200° C annealing, passivation predominates over compensation while a 400° C annealing extends partial passivation throughout the layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 345
Copyright
Copyright © Materials Research Society 1988

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References

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