Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T17:51:36.405Z Has data issue: false hasContentIssue false
  • English
  • Français

Capacitance Spectroscopy of n-i-n and p-i-p GaAs Sandwich Structures with Nanoscale As Clusters in the i-Layers

Published online by Cambridge University Press:  17 March 2011

V.V. Chaldyshev ,
P.N. Brunkov ,
A. V. Chernigovskii ,
A. Moskalenko ,
N.A. Bert ,
S. G. Konnikov ,
V. V. Preobrazhenskii ,
M. A. Putyato  and
B. R. Semyagin
V.V. Chaldyshev
Affiliation:
Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Str., 194021 St.Petersburg, Russia.
P.N. Brunkov
Affiliation:
Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Str., 194021 St.Petersburg, Russia.
A. V. Chernigovskii
Affiliation:
Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Str., 194021 St.Petersburg, Russia.
A. Moskalenko
Affiliation:
Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Str., 194021 St.Petersburg, Russia.
N.A. Bert
Affiliation:
Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Str., 194021 St.Petersburg, Russia.
S. G. Konnikov
Affiliation:
Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Str., 194021 St.Petersburg, Russia.
V. V. Preobrazhenskii
Affiliation:
Institute of Semiconductor Physics, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia.
M. A. Putyato
Affiliation:
Institute of Semiconductor Physics, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia.
B. R. Semyagin
Affiliation:
Institute of Semiconductor Physics, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia.
Get access

Abstract

Accumulation of electrons and holes in GaAs layers, that contained As clusters and were sandwiched between n- and p-type buffer GaAs layers, was revealed by capacitance-voltage measurements. As a result of majority-carrier accumulation, expansive depletion regions are formed in the adjoining buffer layers. Simulation of the capacitance-voltage characteristics, based on a numerical solution of the Poisson equation, shows that the accumulated charge density is ∼1 × 1012 cm−2, which is comparable with the concentration of As nanoclusters determined by transmission electron microscopy. The levels where the electrons or holes are accumulated lie close but above the GaAs midgap. A strong difference in the emission rates of the accumulated electrons and holes has been revealed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 699: Symposium R – Electrically Based Microstructural Characterization III , 2001 , R4.6
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Smith, F. W., Calawa, A. R., Chen, C. L., Mantra, M. J. and Mahoney, L. J., IEEE Electron. Dev. Lett. 9, 77 (1988).Google Scholar
2. Kaminska, M., Liliental-Weber, Z., Weber, E. R., George, T., Kortright, J. B., Smith, F. W., Tsaur, B. Y. and Calawa, A. R., Appl. Phys. Lett. 54, 1831 (1989).Google Scholar
3. Melloch, M. R., Mahalingam, K., Otsuka, N., Woodall, J. M. and Warren, A. C., J. Cryst. Growth 111, 39 (1991).Google Scholar
4. Bert, N. A., Veinger, A. I., Vilisova, M. D., Goloshchapov, S. I., Ivonin, I. V., Kozyrev, S. V., Kunitsyn, A. E., Lavrentieva, L. G., Lubyshev, D. I., Preobrazhenskii, V. V., Semyagin, B. R., Tretyakov, V. V., Chaldyshev, V. V. and Yakubenya, M. P., Phys. Solid State 35, 1289 (1993).Google Scholar
5. Brounkov, P. N., Chaldyshev, V. V., Suvorova, A. A., Bert, N. A., Konnikov, S. G., Chernigovskii, A. V., Preobrazhenskii, V. V., Putyato, M. A. and Semyagin, B. R., Appl. Phys. Lett. 73, 2796 (1998).Google Scholar
6. Brunkov, P. N., Chaldyshev, V. V., Bert, N. A., Suvorova, A. A., Konnikov, S. G., Chernigovskii, A. V., Preobrazhenskii, V. V., Putyato, M. A. and Semyagin, B. R., Semiconductors 32, 1044 (1998).Google Scholar
7. Brunkov, P. N., Chaldyshev, V. V., Chernigovskii, A. V., Suvorova, A. A., Bert, N. A., Konnikov, S. G., Preobrazhenskii, V. V., Putyato, M. A. and Semyagin, B. R., Semiconductors 34, 1068 (2000).Google Scholar
8. Brunkov, P. N., Suvorova, A. A., Bert, N. A., Kovsh, A. R., Zhukov, A. E., Yu, A.. Egorov, Ustinov, V. M., Tsatsul'nikov, A. F., Ledentsov, N. N., Kop'ev, P. S., Konnikov, S. G., Eaves, L. and Main, P. C., Semiconductors 32, 1096 (1998).Google Scholar