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Calibration of Wafer Temperature to Nist Traceable Standards Using an Isothermal Cavity

Published online by Cambridge University Press:  10 February 2011

Peter Vandenabeele  and
Wayne Renken
Peter Vandenabeele
Affiliation:
SensArray, Bouwelsesteenweg 203A, 2560 Nijlen, [email protected]
Wayne Renken
Affiliation:
SensArray, 3410 Garrett Drive, Santa Clara, CA [email protected]
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Abstract

The offset between Si temperature and indicated TC temperature when a thermocouple instrumented wafer is placed in a double side heated RTP system was measured by means of an isothermal cavity, formed by 2 parallel Si wafers mounted in the system. The lamp powers were controlled to get an equal wafer temperature, making the cavity isothermal. Inside the cavity, an R-type TC with a NIST traceable calibration was mounted. Outside the cavity, a standard type K 1530 SensArray thermocouple [1] was exposed to the typical conditions in an RTP system. The offset was measured as the difference between the indicated temperature of the standard 1530 TC and the temperature of the NIST traceable type R TC. The 3 sources of the offset are discussed and a typical correction factor is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 115
Copyright
Copyright © Materials Research Society 1998

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References

[1] Vandenabeele, Peter, Renken, Wayne, “Study of repeatability, relative accuracy and lifetime of thermocouple instrumented calibration wafers for RTP “, MRS Spring '97, RTP session.Google Scholar
[2] Unpublished. FE simulations used a simplified 2D cylindrical model of the bond area.Google Scholar
[3] lot 4010.3 and 4983 of 0.003” (75 μm) type K wire, as used by SensArray for 1530 fabricationGoogle Scholar
[4] Kreider, Ken, presentation at the NIST Advisory Group meeting, 29 Jan 1998 and Ken Kreider, “RTP calibration using thin film thermocouples”, MRS Spring ';98, RTP session.Google Scholar
[5] Vandenabeele, Peter, Renken, Wayne, “Model Based temperature Control in RTP yielding ±0.1 °C accuracy on a 1000 “C, 2 second spike anneal”, MRS spring ‘98, RTP session.Google Scholar