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Buried SiC Layers in (100) Bulk Silicon and Silicon-on-Sapphire Produced by Carbon Ion Implantation

Published online by Cambridge University Press:  25 February 2011

L. Kroko ,
I. Golecki  and
H.L. GLASS
L. Kroko
Affiliation:
2822-D Walnut Avenue, Tustin, CA 92680.
I. Golecki
Affiliation:
Rockwell International Corporation, Defense Electronics Operations, Microelectronics Research and Development Center, Science Center, 3370 Miraloma Avenue, Anaheim, CA 92803
H.L. GLASS
Affiliation:
Rockwell International Corporation, Defense Electronics Operations, Microelectronics Research and Development Center, Science Center, 3370 Miraloma Avenue, Anaheim, CA 92803
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Abstract

We demonstrate the formation of buried layers of SiC in (100) single-crystal bulk Si and silicon-on-sapphire by ion implantation of 125-180 keV, (0.56-1.00)×1018 C/cm2 at 30-40 μA/cm2 into samples held at 450-650¼C. The as-implanted and 950°C annealed samples are characterized by differential infra-red absorbance and reflectance, Rutherford backscattering and channeling spectrometry, X-ray diffraction, four-point probe, Dektak profilometry, I-V measurements, spreading resistance and secondary ion mass spectrometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 323
Copyright
Copyright © Materials Research Society 1985

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References

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