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Buffer Layers for Ferroelectric-Based Infra-Red Detectors on Si Grown by a Novel CVD Method

Published online by Cambridge University Press:  15 February 2011

Gregory T. Stauf ,
Peter C. VanBuskirk ,
Peter S. Kirlin  and
Walter P. Kosar
Gregory T. Stauf
Affiliation:
Advanced Technology Materials, Danbury, CT., Steven Nutt, Brown University, Providence, RI
Peter C. VanBuskirk
Affiliation:
Advanced Technology Materials, Danbury, CT., Steven Nutt, Brown University, Providence, RI
Peter S. Kirlin
Affiliation:
Advanced Technology Materials, Danbury, CT., Steven Nutt, Brown University, Providence, RI
Walter P. Kosar
Affiliation:
Advanced Technology Materials, Danbury, CT., Steven Nutt, Brown University, Providence, RI
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Abstract

Ferroelectrics such as PbTiO3 and BaSrTiO3 are promising candidates for pyroelectric infrared detector materials. Integration of ferroelectric thin films on Si will permit fabrication of low-cost infrared detector arrays, but a buffer layer will be required to reduce interactions with the substrate. For this reason we have investigated MOCVD of MgAl2O4 and yttria-stabilized zirconia (YSZ) buffer layers on both Si and MgO. A single source molecule, magnesium dialuminum isopropoxide (Mg[Al(OCH(CH3)2)4]2), was used for deposition of the MgAl2O4, the first time to our knowledge that well characterized multi-metal oxide films have been deposited by CVD from a single-source compound. Both EDAX and RBS showed film stoichiometries consistent with the elemental ratio in the source. A novel liquid solution-based flash vaporization technique was used to transport the organometallic sources into the reactor, providing both excellent reproducibility and ease of stoichiometry control and deposition rate. Highly oriented [100] MgAl2O4 was grown on MgO, and [100] YSZ was grown on MgO and Si. Degree of preferred orientation of the YSZ was found to be dependent on oxygen partial pressure, both for the MgO and Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 291
Copyright
Copyright © Materials Research Society 1994

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References

1 See for example Kulwicki, B. M., Amin, A., Beratan, H.R. and Hanson, C.M., Proceedings of the 1992 ISAF Conference, p. 1–9; N.M. Shorrocks, R.W. Whatmore and P.C. Osbond, Ferroelectrics 106, 387 (1990); and and J.J. Ritter, R.S. Roth and J.E. Blendell, J. Am. Ceram. Soc. 69, 155 (1986).Google Scholar
2 Chynoweth, A.G., J. Appl. Phys. 27, 78 (1956).Google Scholar
3 Deb, K.K., Hill, M.S. and Kelly, J.F., J. Mater. Res. 7(12), 3296 (1992).Google Scholar
4 Whatmore, R.W., Ferroelectrics 118, 241 (1991).Google Scholar
5 Ainger, F., Patel, A., Shorrocks, N. M., Trundle, C. and Whatmore, R.W., Integrated Ferroelectrics 1, 363 (1992).Google Scholar
6 Sakuma, T., Yamamichi, S., Matsubara, S., Yamaguchi, H. and Miyasaka, Y., Appl. Phys. Lett. 57(23), 2431 (1990).Google Scholar
7 McKee, R.A., Walker, F.J., Conner, J.R., Specht, E.D. and Zelmon, D.E., Appl. Phys. Lett. 59(7), 782 (1991).Google Scholar
8 Nashimoto, K., Fork, D.K. and Geballe, T.H., Appl. Phys. Lett. 60(10), 1199 (1992).Google Scholar
9 Reus, R. De, Saris, F.W., Kolk, G.J. Van der, Witmer, C., Dam, B., Blank, D.H.A., Adelerhof, D.J. and Flokstra, J., Mat. Sci and Eng. B7, 135 (1990).Google Scholar
10 Matsubara, S., Miura, S., Miyasaka, Y. and Shohata, N., J. Appl. Phys. 66(12), 5826(1989).Google Scholar
11 Fork, D.K., Fenner, D.B., Barton, R.W., Phillips, J.M., Connell, G.A.N., Boyce, J.B. and Geballe, T.H., Appl. Phys. Lett. 57(11), 1161 (1990); also Q.X. Jia, S.Y. Lee, Z.Q. Shi, W.A. Anderson and D.T. Shaw, J. Vac. Sci. Technol. A 10(4), 1544(1992).Google Scholar
12 Swartz, S.L. and Wood, V.E., Condensed Matter News 1(5), 4 (1992).Google Scholar
13 See, for example, Stringfellow, G.B., Organometallic Vapor-Phase Epitaxy (Academic, Boston, 1989).Google Scholar
14 Zhang, J., Gardiner, R.A., Kirlin, P.S., Boerstler, R.W. and Steinbeck, J., Appl. Phys. Lett. 61(24), 2884 (1992).Google Scholar
15 “Coordination Compounds of Alkali and Alkaline Earth Meatls with Covalent Characteristics.” Kapoor, P. N.; Mehrotra, R. C. Coord. Chem. Rev., 1974, 14, 1–27.Google Scholar
16 Wernberg, A.A., Gysling, H.J., Filo, A.J. and Blanton, T.N., Appl. Phys. Lett. 62(9), 946(1993).Google Scholar
17 Fenner, D.B., Biegelsen, D.K., Bringans, R.D. and Krusor, B.S., Mat. Res. Soc. Symp. Proc. 148,279 (1989).Google Scholar
18 Kirlin, P.S., Binder, R.L. and Gardiner, R.A., U.S. Patent Application 07/807,807.Google Scholar
19 The presence of halides was meant to mimic some aspects of the halide CVD process successfully used to grow MgAl2O4 buffer layers on Si by Matsubara et al. See: Matsubara, S., Miura, S., Miyasaka, Y. and Shohata, N., J. Appl. Phys. 66(12), 5826 (1989).Google Scholar
20 Mori, H. and Ishiwar, H., J. J. Appl. Phys., 30, L1415 (1991).Google Scholar
21 Unpublished data.Google Scholar
22 Fenner, D.B., Biegelsen, D.K., Bringans, R.D. and Krusor, B.S., Mat. Res. Soc. Symp. Proc., 148, 279 (1989).Google Scholar
23 Magee, , Walter, L., Telschow, , Jeffrey, E., pat. no. US 4288604, issued Sept. 1981.Google Scholar