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The “Buffer” Layer in the Cvd Growth of β-SiC on (001) Silicon

Published online by Cambridge University Press:  25 February 2011

T. T. Cheng ,
P. Pirouz  and
J. A. Powell
T. T. Cheng
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106
P. Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106
J. A. Powell
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
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Abstract

The concept of a “buffer” layer in the epitaxial growth of compound semiconductors on (001) silicon substrate is discussed on the basis of homogeneous and heterogeneous surface nucleation. Experimental results on the nucleation of β-SiC on (001) Si by Chemical Vapor Deposition (CVD) are presented and they are discussed in terms of the model for the growth of the buffer layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 229
Copyright
Copyright © Materials Research Society 1989

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References

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