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Bromine-Methanol Etching of Cadmium Telluride in a Rotating Disk Reactor

Published online by Cambridge University Press:  25 February 2011

Michael B. Gentzler
Affiliation:
Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
Edmond I. Ko
Affiliation:
Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
Paul J. Sides
Affiliation:
Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
Paul T. Bowman
Affiliation:
Olin Chemicals, New Haven, CT 06511
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Abstract

The kinetics of the bromine-methanol etching of CdTe were studied in a rotating disk reactor as a function of temperature, bromine concentration, substrate orientation, and rotation rate. The results indicated that the etching process is mass transfer controlled from -20°C to 40°C and to a maximum rotation rate of 1200 RPM. A one-dimensional transport model was used to obtain effective diffusion coefficients for bromine in methanol. The diffusion coefficient of the etchant in methanol is given by 3.7×10-8 (T/η) cm2/s over the range of 2.5°C to 23°C.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Bowman, P.T., “The Bromine-Methanol Etching of Cadmium Telluride Surfaces for Use as Substrates in Epitaxial Film Growth,” PhD Thesis, Carnegie Mellon University, 1989.Google Scholar
2. Skoog, D.A., West, D.M., and Holler, F.S., Fundamentals of Analytical Chemistry, (Saunders College Publishing, New York, NY, 1988), pp. 779781.Google Scholar
3. Von Karman, Th., Zeitschrift fur angewandte Mathematik und Mechanik 1, 233 (1921).Google Scholar
4. Levich, B., Acta Physicochimica U.R.S.S. 17, 257 (1942).Google Scholar
5. Talasek, R.T. and Syllaisos, A. J., J. Electrochem. Soc. 132, 656 (1985).Google Scholar
6. Weast, R.C., Ed., CRC Handbook of Chemistry and Physics. 64th ed., (CRC Press, Boca Raton, FL, 1983-1984), p. B79.Google Scholar
7. Sherwood, T.K., Pigford, R.L. and Wilke, C.R., Mass Transfer (McGraw-Hill Inc., New York, 1975), pp. 25, 31.Google Scholar
8. Strauss, A.J., “The Physical Properties of Cadmium Telluride”, Lincoln Laboratories, M.I.T., Lexington, Mass., 02173.Google Scholar
9. Zitter, R.N., Surface Science 28, 335 (1971).Google Scholar
10. Feldman, R.D., Opilia, R.L., Bridenbaugh, P.M., J. Vac. Sci. Technol. A3, 1988 (1985).Google Scholar
11. Konova, A.A., Shopov, A., Iv. Nedev, Thin Solid Films 140, 189 (1986).Google Scholar