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Broad Band vs Phonon Resolved Luminescence in Si1−xGex/Si Heterostructures Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

D. C. Houghton ,
N. L. Rowell ,
J.-P. Noel ,
M. M. Dion ,
J. McCaffrey ,
M. Davies ,
A. Wang  and
D. D. Perovic
D. C. Houghton
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada, KIA OR6.
N. L. Rowell
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada, KIA OR6.
J.-P. Noel
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada, KIA OR6.
M. M. Dion
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada, KIA OR6.
J. McCaffrey
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada, KIA OR6.
M. Davies
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada, KIA OR6.
A. Wang
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada, KIA OR6.
D. D. Perovic
Affiliation:
Department of Metallurgy and Materials Science, University of Toronto, Toronto, Ontario, Canada M5S 1A4
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Abstract

Si1−xGex alloys and multilayers synthesized by solid source MBE on Si(100) substrates have been characterized by low temperature photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM). Phonon resolved transitions originating from excitons bound to shallow impurities were observed in addition to a broad band of intense luminescence. PL spectroscopy over the temperature range 2K to 100K has been used to characterize Si1−xGex/Si heterostructures exhibiting both types of PL spectra. Thin alloy layers exhibited phonon-resolved PL spectra, similar to bulk material, but shifted in energy due to strain and hole quantum confinement. In single quantum wells confinement shifts up to ∼200 meV were observed (1.2 nm wells with x = 0.38) and NP linewidths down to 1.37 meV were obtained. However, the broad PL band (peak energy ∼120meV below the strained bandgap) was predominant when the alloy layer thickness was greater than 2 – 10nm, depending on x, growth temperature, and substrate surface preparation. The strength of the broad PL band was correlated with the areal density of strain perturbations (∼109cm−2 per quantum well; local lattice dilation ∼1.5 nm in diameter) observed in plan-view TEM. The role of MBE growth parameters in determining optical properties was investigated by changing growth temperature, substrate preparation procedures and exploring the effect of surface passivation in a hydrogen ambient. In addition, post growth anneals at temperatures in the range 700°C to 1 100°C were carried out, where interdiffusion removes interfacial asperities and the broad luminescence band decays to zero intensity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 455
Copyright
Copyright © Materials Research Society 1993

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