Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Borland, J.O.
2002.
Low temperature activation of ion implanted dopants: a review.
p.
85.
Suzuki, K.
Tashiro, H.
Narita, K.
and
Kataoka, Y.
2004.
High activity of B during solid-phase epitaxy in a pre-amorphized layer formed by Ge ion implantation and deactivation during a subsequent thermal process.
IEEE Transactions on Electron Devices,
Vol. 51,
Issue. 5,
p.
663.
Romano, Lucia
Piro, Alberto M.
Napolitani, Enrico
Bisognin, Gabriele
Spada, Aldo
Grimaldi, Maria G.
and
Rimini, Emanuele
2004.
Electrical activation and lattice location of B and Ga impurities implanted in Si.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms,
Vol. 219-220,
Issue. ,
p.
727.
Ebiko, Y.
Suzuki, K.
and
Sasaki, N.
2005.
Improving the Activation of the P<tex>$^+$</tex>Region of Low-Temperature Polycrystalline Si TFTs by Using Solid-Phase Crystallization.
IEEE Transactions on Electron Devices,
Vol. 52,
Issue. 3,
p.
429.
Suzuki, K.
Kawamura, K.
Kikuchi, Y.
and
Kataoka, Y.
2006.
Compact model for amorphous layer thickness formed by ion implantation over wide ion implantation conditions.
IEEE Transactions on Electron Devices,
Vol. 53,
Issue. 5,
p.
1186.
Suzuki, Kunihiro
Kataoka, Yuji
Nagayama, Susumu
Magee, Charles W.
Buyuklimanli, Temel H.
and
Nagayama, Tsutomu
2007.
Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy.
IEEE Transactions on Electron Devices,
Vol. 54,
Issue. 2,
p.
262.
Suzuki, Kunihiro
Tada, Yoko
Kataoka, Yuji
Kawamura, Kazuo
Nagayama, Tsutomu
Nagayama, Susumu
Magee, Charles W.
Buyuklimanli, Temel H.
Mueller, Dominik Christoph
Fichtner, Wolfgang
and
Zechner, Christoph
2007.
Maximum Active Concentration of Ion-Implanted Phosphorus During Solid-Phase Epitaxial Recrystallization.
IEEE Transactions on Electron Devices,
Vol. 54,
Issue. 8,
p.
1985.
Suzuki, Kunihiro
Tada, Yoko
Kataoka, Yuji
Kawamura, Kazuo
and
Nagayama, Tsutomu
2008.
Analytical Model of Amorphous Layer Thickness Formed by High-Tilt-Angle As Ion Implantation.
IEEE Transactions on Electron Devices,
Vol. 55,
Issue. 4,
p.
1080.
Suzuki, Kunihiro
Ikeda, Keiji
Yamashita, Yoshimi
Harada, Masaomi
Taoka, Noriyuki
Kiso, Osamu
Yamamoto, Toyoji
Sugiyama, Naoharu
and
Takagi, Shin-Ichi
2009.
Ion-Implanted Impurity Profiles in Ge Substrates and Amorphous Layer Thickness Formed by Ion Implantation.
IEEE Transactions on Electron Devices,
Vol. 56,
Issue. 4,
p.
627.
Chi T. Cao, Linh
Hakim, Luqman
and
Hsu, Shu-Han
2022.
Characteristics and Applications of Boron.