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Boron Phosphide on Silicon for Radiation Detectors

Published online by Cambridge University Press:  26 February 2011

J. C. Lund ,
F. Olschner ,
F. Ahmed  and
K. S. Shah
J. C. Lund
Affiliation:
Radiation Monitoring Devices, Inc. Watertown, MA 02172
F. Olschner
Affiliation:
Radiation Monitoring Devices, Inc. Watertown, MA 02172
F. Ahmed
Affiliation:
Devcom Inc., Framingham, MA 01701
K. S. Shah
Affiliation:
Radiation Monitoring Devices, Inc. Watertown, MA 02172
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Abstract

We report on radiation detectors fabricated from boron phosphide (BP) layers. These devices were fabricated by growing 1 to 10 μm thick layers of BP by chemical vapor deposition (CVD) on (100) oriented n-type silicon substrates. Ohmic contacts were applied to the Si (Au-Sb). Schottky barrier contacts (also Au-Sb) were applied to the BP layer. The devices were tested as radiation detectors and were found to be capable of detecting individual 5.5 MeV alpha particles. With some improvements we hope to fabricate neutron detectors from these devices, making use of the very high cross-section of boron for thermal neutrons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 601
Copyright
Copyright © Materials Research Society 1990

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References

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