Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T08:21:31.591Z Has data issue: false hasContentIssue false
  • English
  • Français

Boron Nitride: Composition, Optical Properties, and Mechanical Behavior

Published online by Cambridge University Press:  25 February 2011

John J. Pouch ,
Samuel A. Alterovitz ,
Kazuhisa Miyoshi  and
Joseph O. Warner
John J. Pouch
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
Samuel A. Alterovitz
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
Kazuhisa Miyoshi
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
Joseph O. Warner
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
Get access

Abstract

A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphide. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen Impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by x-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on the III–V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 323
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Rand, N.J. and Roberts, J.F., J. Electrochem. Soc. 115, 423 (1968)..Google Scholar
2. Hirayama, M. and Shohno, K., J. Electrochem. Soc. 122, 1671 (1975).Google Scholar
3. Wiggins, M.D., Aita, C.R., and Hickernell, F.S., J. Vac. Sci. Technol. A2, 322 (1984).Google Scholar
4. Guzman, L., Marchetti, F., Calliari, L., Scotoni, I., and Ferrari, F., Thin Solid Films 117, L63 (1984).Google Scholar
5. Chopra, K.L., Agarwal, V., Vankar, V.D., Deshpandey, C.V., and Bunshah, R.F., Thin Solid Films 126, 307 (1985).Google Scholar
6. Halverson, W. and Quinto, D.T., J. Vac. Sci. Technol. A3, 2141 (1985).Google Scholar
7. Davis, L.E., MacDonald, N.C., Palmberg, P.W., Riach, G.E., and Weber, R.E., Handbook of Auger Electron Spectroscopy, 2nd ed., Perkin-Elmer Corp., Eden Prairie, p. 13, (1978).Google Scholar
8. Alterovitz, S., Bu-Abbud, G.H., Woollam, J.A., and Liu, D.C., J. Appl. Phys. 54, 1559 (1983).Google Scholar
9. Miyoshi, K., Buckley, D.H., and Spalvins, T., J. Vac. Sci. Technol. A3, 2340 (1985).Google Scholar
10. Wagner, C.D., Riggs, W.M., Davis, L.E., Moulder, J.F., and Muilenberg, G.E., Handbook of X-Ray Photoelectron Spectroscopy, 1st ed. Perkin-Elmer Corp., Eden Prairie, p. 36, (1979).Google Scholar
11. Pouch, J.J., Alterovitz, S.A., Warner, J.D., Liu, D.C., and Lanford, W.A., in “Thin Films: The Relationship of Structure to Properties,” Aita, C.R. and SreeHarsha, K.S., eds., Materials Research Society, Pittsburgh, p. 201 (1985).Google Scholar
12. Alterovitz, S.A., Warner, J.D., Liu, D.C., and Pouch, J.J., in Proceedings of the Symposium on Dielectric Films on Compound Semiconductors, Kapoor, V.J., Connolly, D.J., and Wong, Y.H., eds., Electrochemical Society, Pennington, p. 59 (1986).Google Scholar