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Boron Diffusion in Si1−x Gex Strained Layers

Published online by Cambridge University Press:  25 February 2011

N. Moriya ,
C. A. King ,
L. C. Feldman ,
H. S. Luftman ,
M. L. Green ,
J. Bevk  and
B. E. Weir
N. Moriya
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
C. A. King
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. C. Feldman
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
H. S. Luftman
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
M. L. Green
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. Bevk
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
B. E. Weir
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Boron diffusion in Sia7 Gea3 strained layers has been studied as a function of annealing temperature and is compared to boron diffusion in unstrained Si epitaxial layers. A lower diffusivity was observed in Sia7 Gea3 strained layers as compared to the Si control samples. Using the well-accepted model for boron diffusion via charged point defects in Si, the intrinsic diffusivities of the boron atoms in the Sia7 Gea3 layers were derived and an activation energy of 4.4 eV was estimated for the diffusion process.

A new approach to describe the diffusion process is also presented here. In this model, we relate the lower diffusivity to a corresponding change in the charged point defect equilibrium concentration caused by a change in band-gap due to the strain and the existence of foreign atoms in a Si matrix.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 427
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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