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Boron Diffusion in Bulk Cobalt Disilicide

Published online by Cambridge University Press:  21 February 2011

P. Gas ,
C. Zaring ,
B.G. Svensson ,
M. Östling ,
H.J. Whitlow  and
T. Barge
P. Gas
Affiliation:
URA 443, CNRS, Laboratorie de Mdtallurgie, Case 511, Universitéd Saint Jérome, 13397, Marseille cedex 13, France
C. Zaring
Affiliation:
The Royal Institute of Technology, Solid State Electronics, P.O. Box 1298, S-164 28 Kista-Stockholm, Sweden
B.G. Svensson
Affiliation:
The Royal Institute of Technology, Solid State Electronics, P.O. Box 1298, S-164 28 Kista-Stockholm, Sweden
M. Östling
Affiliation:
The Royal Institute of Technology, Solid State Electronics, P.O. Box 1298, S-164 28 Kista-Stockholm, Sweden
H.J. Whitlow
Affiliation:
The Royal Institute of Technology, Solid State Electronics, P.O. Box 1298, S-164 28 Kista-Stockholm, Sweden
T. Barge
Affiliation:
URA 443, CNRS, Laboratorie de Mdtallurgie, Case 511, Universitéd Saint Jérome, 13397, Marseille cedex 13, France
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Abstract

The lattice diffusion of boron in bulk cobalt disilicide has been studied at temperatures between 450 and 950°C. Two different diffusion sources, a deposited surface layer of boron and an implanted boron distribution, were used. The lattice diffusion coefficient has been deduced from the boron profiles measured by secondary ion mass spectrometry (SIMS); in the studied temperature range the coefficient varies between 6.2×10−17 and 3.0× 10−11 cm2/s with an activation energy of 2.0 eV. These values reveal a very rapid lattice diffusion and agree with results reported previously in the literature concerning redistribution of boron implanted in thin films of CoSi2, and it also emphasizes the important role played by interfaces during the boron redistribution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 131
Copyright
Copyright © Materials Research Society 1990

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References

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