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Boron Diffusion Coefficient in Diamond

Published online by Cambridge University Press:  10 February 2011

T. Sung ,
G. Popovici ,
M. A. Prelas  and
R. G. Wilson
T. Sung
Affiliation:
Nuclear Engineering Dept. University of Missouri-Columbia, MO 65211
G. Popovici
Affiliation:
Nuclear Engineering Dept. University of Missouri-Columbia, MO 65211
M. A. Prelas
Affiliation:
Nuclear Engineering Dept. University of Missouri-Columbia, MO 65211
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
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Abstract

A study of boron diffusion into diamond lattice was performed. Diffusion was made in hydrogen atmosphere at 30 torr. Two type IIa diamonds were heated at 1200 and 1400 °C for 20 hours and 5 minutes, respectively. Boron powder was used as a dopant source. The boron concentration profiles of both samples were measured by secondary ion mass spectrometry. Based on Fick's law, the diffusion coefficients were computed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 467
Copyright
Copyright © Materials Research Society 1996

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References

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