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Bonding CVD Diamond to WC-Co by High Pressure - High Temperature Processing

Published online by Cambridge University Press:  26 February 2011

Naira Maria Balzaretti
Affiliation:
[email protected], Federal University of Rio Grande do Sul, Physics Institute, Av. Bento Goncalves, 9500, PO Box 15051, Porto Alegre - RS, 91501-970, Brazil, 55 51 3316 6489, 55 51 3316 7286
Altair Soria Pereira
Affiliation:
[email protected], Federal University of Rio Grande do Sul, Engineering School, Av. Bento Goncalves, 9500, Porto Alegre, RS, 91501-970, Brazil
Rafael Vieira Camerini
Affiliation:
[email protected], Federal University of Rio Grande do Sul, Engineering School, Av. Bento Goncalves, 9500, Porto Alegre, RS, 91501-970, Brazil
Sérgio Ivan dos Santos
Affiliation:
[email protected], Federal University of Rio Grande do Sul, Physics Institute, Av. Bento Goncalves, 9500, CP 15051, Porto Alegre, RS, 91501-970, Brazil
João Alziro Herz da Jornada
Affiliation:
[email protected], INMETRO, Rua Santa Alexandrina, 416, Rio de Janeiro, RJ, 20261-232, Brazil
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Abstract

In this work we investigate the effect of processing at high pressure-high temperature (HPHT) on the adhesion of CVD diamond coatings on WC-Co substrates. The samples consisted of WC-Co substrates coated with thin diamond films (10 – 40 μm thick) grown by microwave plasma (MWCVD) CVD. The substrates were previously etched in order to remove the Co from the surface region. The adhesion of the film and its wear resistance improved after the HPHT treatment. SEM images of the cross section of the coated substrate revealed that Co infiltrated back to the region where it was previously removed. The results indicate that it is possible to take advantage of the HPHT plants already available around the world to produce, besides PCD's and diamond powder, high-performance CVD diamond cutting tools with the advantage of requiring less demanding processing conditions.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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