Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-29T07:32:08.920Z Has data issue: false hasContentIssue false

Bond Selective Chemistry with Photon-Stimulated Desorption

Published online by Cambridge University Press:  21 February 2011

J. A. Yarmoff
Affiliation:
National Institute of Standards and Technology, Surface Science Division, Gaithersburg, MD 20899
S. A. Joyce
Affiliation:
National Institute of Standards and Technology, Surface Science Division, Gaithersburg, MD 20899
Get access

Abstract

Photon stimulated desorption of fluorine ions from silicon surfaces was studied via excitation of the Si 2p core level with synchrotron radiation. These results showed that the process is chemically selective in that the removal of a fluorine ion from a silicon species in a given oxidation state can be enhanced by tuning the photon energy to the excitation wavelength corresponding to a transition from the 2p core level of the bonding atom to the conduction band minimum. This process was studied as a possible means for the production of surfaces with selected compositions of species. The results of selective exposures of fluorinated surfaces to monochromatized radiation indicated that secondary desorption processes and the inherent chemistry of the surface reactions can override the effects of selective desorption. Other possibilities for selective surface reactions via core-level excitations are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Bozso, F. and Avouris, Ph., Phys. Rev. Lett. 57, 1185 (1986).Google Scholar
2. Yarmoff, J.A., Taleb-Ibrahimi, A., McFeely, F.R. and Avouris, Ph., Phys. Rev. Lett. 60, 960 (1988).Google Scholar
3. Himpsel, F.J., Heimann, P., Chiang, T.-C. and Eastman, D.E., Phys. Rev. Lett. 45,1112 (1980).Google Scholar
4. Eastman, D.E., Donelon, J.J., Hein, N.C. and Himpsel, F.J., Nucl. Instrum. Methods 172, 327 (1980).Google Scholar
5. McFeely, F.R., Morar, J.F., Shinn, N.D., Landgren, G. and Himpsel, F.J., Phys. Rev. B 30, 764 (1984).Google Scholar
6. Madey, T.E., Stockbauer, R., Veen, J.F. van der and Eastman, D.E., Phys. Rev. Lett. 54,187 (1980).Google Scholar
7. Joyce, S.A., Yarmoff, J.A., Johnson, A.L. and Madey, T.E. in Chemical Perspectives of Microelectronic Materials, edited by Gross, M.E., Yates, J.T. Jr. and Jasinski, J. (Materials Research Society Symposium Proceedings, Pittsburgh, PA).Google Scholar
8. Bozack, M.J., Dresser, M.J., Choyoke, W.J., Taylor, P.A. and Yates, J.T. Jr., Surf. Sci. 184, L332 (1987).Google Scholar
9. Yarmoff, J.A. and Joyce, S.A., unpublished.Google Scholar
10. Eberhardt, W., Sham, T.K., Carr, R., Krummacher, S., Strongin, M., Weng, S.L. and Wesner, D., Phys. Rev. Lett. 50, 1038 (1983).Google Scholar