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Bombardment by Reflection - A Novel Method to Prepare High Quality Hydrogenated Amorphous Germanium by Anodic PCVD

Published online by Cambridge University Press:  15 February 2011

Annette Diez  and
Twlo P. Drüsedau
Annette Diez
Affiliation:
Institut für Experimentelle Physik/ Abt. FestkÖrperphysik derOtto-von-Guericke-Universität PF 4120, D - 39016 Magdeburg, Germany
Twlo P. Drüsedau
Affiliation:
Institut für Experimentelle Physik/ Abt. FestkÖrperphysik derOtto-von-Guericke-Universität PF 4120, D - 39016 Magdeburg, Germany
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Abstract

Deposition of amorphous germanium by anodic PCVD was performed changing the germane/hydrogen dilution ratio from 1/6 to 1/100. Films deposited under high dilution of germane are of a high mechanical density (92.5 % of bulk) and good optoelectronic properties (electrical conductivity at room temperature σ=10−5 (Ω cm)−1, majority carrier mobility-lifetime product at λ=1200 nm ημ=x 10−7 cm2/V). The quality of the films is increased by deposition at increasing pumping speed for hydrogen (lower hydrogen pressure) keeping the other parameters constant. It is suggested that fast atomic hydrogen originating from a backscattering process at the powered electrode bombard the growing film and contribute to the improved quality of the a-Ge:H. Also, the growth kinetics of the films is changed from linear to parabolic dependence on germane flow interchanging deposition from high to low hydrogen pressure. This effect is rationalized in terms of a contribution of energetic atomic hydrogen to the dissociation of germane.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 639
Copyright
Copyright © Materials Research Society 1997

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References

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