Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T16:39:38.041Z Has data issue: false hasContentIssue false
  • English
  • Français

Blue Luminescence from SiOx Films Containing Ge Nanocrystals

Published online by Cambridge University Press:  15 February 2011

M. Zacharias ,
R. Weigand ,
J. Bläsing  and
J. Christen
M. Zacharias
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke University, PF4120, 39016 Magdeburg, Germany
R. Weigand
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke University, PF4120, 39016 Magdeburg, Germany
J. Bläsing
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke University, PF4120, 39016 Magdeburg, Germany
J. Christen
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke University, PF4120, 39016 Magdeburg, Germany
Get access

Abstract

We present a systematic analysis of SiOx alloys films containing Ge nanocrystals prepared by dc magnetron sputtering. Increasing the sputtering power (50–175W) reduces the average Ge nanocrystal size exponentially down to ∼2nm. Broad band photoluminescence spectra are observed in the visible at room temperature centered at ∼3eV or/and ∼2eV. Neither the 3eV nor the 2eV luminescence can be correlated to the change in the size. Excluding the quantum-confined origin, the presence of a luminescence center located in the inhomogeneous strain field of the Ge nanocrystal surface is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 117
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

present address: Department of Electrical Engineering, University of Rochester, Rochester, N.Y. 14627, USA

References

REFERENCES

1Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2Tsybeskov, L., Duttagupta, S.D., Hirschman, K.D., Fauchet, P.M., Appl. Phys. Lett. 68, 2058 (1996).Google Scholar
3Hirschman, K.D., Tsybeskov, L., Duttagupta, S.D., Fauchet, P.M., Nature 384, 338 (1996)Google Scholar
4Lockwood, D.J., Lu, Z.H. and Baribeau, J.-M., Phys. Rev. Lett. 76, 539 (1996).Google Scholar
5Min, K.S., Shcheglov, K.V., Yang, C.M., Atwater, H.A., Brogersma, M.L. and Polman, A., Appl. Phys. Lett. 68, 2511 (1996)Google Scholar
6Delley, B. and Steigmeier, E.F., Phys. Rev. B47, 1397 (1993)Google Scholar
7Maeda, Y., Phys. Rev. 51 (1995) 1658.Google Scholar
8Kanemitsu, Y., Uto, H., Masumoto, Y., Maeda, Y., Appl. Phys. Lett. 61, 2187 (1992).Google Scholar
9Paine, D.C., Caragianis, C., Shigesato, S., Appl. Phys. Lett. 60, 2286 (1992).Google Scholar
10Kayanuma, Y., Phys. Rev. B38, 9797 (1988).Google Scholar
11Tran Thoai, D.B., Hu, Y.Z. and Koch, S.W., Phys. Rev. B42, 11261 (1990).Google Scholar
12Takagahara, T. and Takeda, K., Phys. Rev. B46, 15578 (1992).Google Scholar
13Richard, T.Lefebvre, P., Mathieu, H. and Allegre, J., Phys. Rev. B53, 7287 (1996).Google Scholar
14Einevoll, G.T., Phys. Rev. B45, 3410 (1992).Google Scholar
15Woggon, U. and Gaponenko, S.V., phys. stat. sol. (b) 189, 285 (1995).Google Scholar
16Koch, F., Petrova-Koch, V., Muschik, T., Nikolov, A. and Gavrilenko, V., MRS Symp. Proc. 283, 197 (1992).Google Scholar
17Hosono, H., Abe, Y., Kinser, D.L., Weeks, R.A., Muta, K. and Kawazoe, H., Phys. Rev. B46, 11445 (1992).Google Scholar
18Nishii, J., Fukumi, K., Yamanaka, H., Kawamura, K., Hosono, H. and Kawazoe, H., Phys. Rev. B52, 1661 (1995).Google Scholar
19Zacharias, M., Biasing, J., Lohmann, M., Christen, J., Thin Solid Films, 278, 32 (1996).Google Scholar
20Oechner, H., Appl. Phys. 8, 185 (1975).Google Scholar
21Zacharias, M., Biasing, J., Christen, J., Wendt, U., J. of Non-Cryst. Solids, 198–200, 919 (1996).Google Scholar