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Blue Lasers Based on II-VI Semiconductor Heterostructures

Published online by Cambridge University Press:  25 February 2011

Z. Yu ,
J. Ren ,
Y. Lansari ,
K. J. Gossett ,
B. Sneed ,
K. A. Bowers ,
J. W. Cook Jr  and
J. F. Schetzina
Z. Yu
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
J. Ren
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
Y. Lansari
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
K. J. Gossett
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
B. Sneed
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
K. A. Bowers
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
J. W. Cook Jr
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
J. F. Schetzina
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

Properties of blue laser diodes based on ZnSe-related II-VI semiconductor heterostructures are reported. At 77 K, continuous-wave (cw) operation has been achieved for lasers emitting at wavelengths as short as 470.4 nm (2.635 eV), while pulsed laser emission has been observed up to ∼200 K, for samples with uncoated facets. Measured turn-on voltages for stimulated emission at 77 K were as low as 12 V for some of the laser diodes due to improved ohmic contacts. For some particular devices, differential quantum efficiencies as high as 36% per (uncoated) facet have been obtained at 77 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 543
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Haase, M.A., Qiu, J., Depuydt, J. M., and Cheng, H., Appl. Phys. Lett. 59, 1272 (1991).Google Scholar
2. Jeon, H., Ding, J., Patterson, W., Nurmikko, A.V., Xie, W., Grilio, D.C., Kobayashi, M. and Gunshor, R.L., Appl. Phys. Lett. 59, 3619 (1991).Google Scholar
3. Xie, W., Grilio, D.C., Gunshor, R.L., Kobayashi, M., Jeon, H., Ding, J., Nurmikko, A.V., Hua, G.C. and Otsuka, N., Appl. Phys. Lett. 60, 1999 (1992).Google Scholar
4. Yu, Z., Ren, J., Sneed, B., Bowers, K.A., Gossett, K.J., Boney, C., Lansari, Y., Cook, J.W. Jr, and Schetzina, J.F., Appl. Phys. Lett. 61, 1266 (1992).Google Scholar
5. 1990 Photonics Design and Application Handbook. Vol. 3 (Laurin Publishing Co., Pittsfield, MA, 1991), p. H–35.Google Scholar
6. Cook, J.W. Jr, Eason, D.B., and Harris, K.A., J. Vac. Sci. Technol. B 8, 196 (1991).Google Scholar
7. Cook, J.W. Jr, Eason, D.B., Vaudo, R.P. and Schetzina, J.F., J. Vac. Sci. Technol. B 10, 901 (1991).Google Scholar
8. Park, R.M., Troffer, M.B., Rouleau, C.M., Depuydt, J.M., and Haase, M.A., Appl. Phys. Lett. 57, 2127 (1990).Google Scholar
9. Ohkawa, K., Karasawa, T., and Mitsuyu, T., J. Crystal Growth 111, 797 (1991).Google Scholar
10. Ohkawa, K., Mitsuyu, T., and Yamazaki, O., J. Appl. Phys. 62, 3216 (1987).Google Scholar
11. Cheng, H., Depuydt, J., Potts, J., and Haase, M., J. Crystal Growth 95, 512 (1988).Google Scholar
12. Hwang, S., Ren, J., Bowers, K.A., Cook, J.W. Jr, and Schetzina, J.F., Mater. Res. Soc. Symp. Proc. 161, 133 (1990).Google Scholar
13. Lansari, Y., Ren, J., Sneed, B., Bowers, K.A., Cook, J.W. Jr, and Schetzina, J.F., Appl. Phys. Lett. 61, 2554 (1992).Google Scholar