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Blue Lasers Based on II-VI Semiconductor Heterostructures

Published online by Cambridge University Press:  25 February 2011

Z. Yu ,
J. Ren ,
Y. Lansari ,
K. J. Gossett ,
B. Sneed ,
K. A. Bowers ,
J. W. Cook Jr  and
J. F. Schetzina
Z. Yu
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
J. Ren
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
Y. Lansari
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
K. J. Gossett
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
B. Sneed
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
K. A. Bowers
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
J. W. Cook Jr
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
J. F. Schetzina
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

Properties of blue laser diodes based on ZnSe-related II-VI semiconductor heterostructures are reported. At 77 K, continuous-wave (cw) operation has been achieved for lasers emitting at wavelengths as short as 470.4 nm (2.635 eV), while pulsed laser emission has been observed up to ∼200 K, for samples with uncoated facets. Measured turn-on voltages for stimulated emission at 77 K were as low as 12 V for some of the laser diodes due to improved ohmic contacts. For some particular devices, differential quantum efficiencies as high as 36% per (uncoated) facet have been obtained at 77 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 543
Copyright
Copyright © Materials Research Society 1993

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References

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