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Bistability of Defects in Semiconductors

Published online by Cambridge University Press:  26 February 2011

Masashi Mizuta
Masashi Mizuta*
Affiliation:
Fundamental Research Laboratories, NEC Corporation 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
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Abstract

The DX center in AlGaAs alloy is reviewed as an example of bistability of defects in semiconductors. Also presented is some technological importance of the defect bistability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 929
Copyright
Copyright © Materials Research Society 1995

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