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Beyond-The-Roadmap Technology: Silicon Heterojunctions, Optoelectronics, and Quantum Devices

Published online by Cambridge University Press:  10 February 2011

Alan Seabaugh ,
Roger Lake ,
Bobby Brar ,
Robert Wallacet  and
Glen Wilk
Alan Seabaugh
Affiliation:
Raytheon TI Systems, Dallas TX 75243
Roger Lake
Affiliation:
Raytheon TI Systems, Dallas TX 75243
Bobby Brar
Affiliation:
Raytheon TI Systems, Dallas TX 75243
Robert Wallacet
Affiliation:
Texas Instruments Incorporated, Dallas TX 75243
Glen Wilk
Affiliation:
Texas Instruments Incorporated, Dallas TX 75243
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Abstract

The roadmap for silicon device technology has been drawn, extending to the year 2010, and featuring a CMOS transistor with a gate length of 0.07 μm [1]. Beyond this point, silicon heterojunctions could provide a means to further device scaling. Silicon heterojunctions could also bring new devices to the silicon substrate including light emitters and detectors, and resonant tunneling diodes (RTDs). Today SiGe/Si and SiGeC/Si heterojunctions are receiving the greatest attention, but heterojunctions now being developed to realize silicon RTDs are increasing the heterojunction options for silicon-based quantum-well and optical devices. Here we outline the fundamental device requirements for silicon optical and tunneling devices and describe progress on silicon heterojunction development towards demonstration of silicon-based RTDs. Materials now under study include, ZnS, crystalline oxides and nitrides; new processes could provide methods for forming crystalline materials over amorphous barriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 67
Copyright
Copyright © Materials Research Society 1998

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