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Beta Silicon Carbide Growth with Device Applications
Published online by Cambridge University Press: 25 February 2011
Abstract
Epitaxial thin films of cubic-SiC (100) have been grown at temperatures ranging from 1340–1400°C by using a reduced pressure chemical vapor deposition system. In this work, we will report on the doping of SiC using trimethylalumium (TMA), phosphine, and nitrogen. The electrical measurements on the SiC layers have been performed (Hall, CV, DLTS, etc.) and will be discussed in reference to SiC MESFETs and other SiC device structures.
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- Research Article
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- Copyright © Materials Research Society 1987
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REFERENCES
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