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Behavior of Metastable Te Donor Concentrations in Q-Switched Ruby Laser Annealed GaAs
Published online by Cambridge University Press: 15 February 2011
Abstract
The thermal behavior of Te implanted, laser annealed GaAs was investigated by helium backscattering spectroscopy and transmission electron microscopy in order to correlate structural changes with the two stage reduction in the carrier concentration due to post laser anneal heating above 200°C. The activation energy for stage one which occurs in the range 200–400°C was determined to be approximately 1.3 eV. Post laser anneal heating at 450°C caused no observable structural changes. On the other hand, 850°C post laser anneal heating induced the formation of precipitates and dislocation loops as well as narrowing the channeling half-angle of Te by about 11%.
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- Copyright © Materials Research Society 1981
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