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Behavior of Electron Traps Induced by Phosphidization and Nitridation of GaAs Surfaces

Published online by Cambridge University Press:  10 February 2011

Satoshi Nozu ,
Koichiro Matsuda  and
Takashi Sugino
Satoshi Nozu
Affiliation:
Department of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, JAPAN
Koichiro Matsuda
Affiliation:
Horiba, Ltd., Miyanohigashi, Kisshoin, Minami-ku, Kyoto 601, JAPAN
Takashi Sugino
Affiliation:
Department of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, JAPAN
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Abstract

GaAs is treated with remote PH3 and N2 plasmas. Electron traps induced by plasma treatments are investigated by isothermal capacitance transient spectroscopy measurements. The EL2 trap is detected in the as-grown GaAs. The TP1 trap(Ec-0.26eV) is generated in GaAs phosphidized for 10min, while the TN1 trap(Ec-0.66eV) is induced in GaAs nitrided for 30min. It is found that the TP1 trap is changed to the another trap with an energy level as shallow as 0.16eV below the conduction band edge and a capture cross section as small as 1.8×10−21cm2 by treating with N2 plasma subsequently after PH3 plasma treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 549
Copyright
Copyright © Materials Research Society 1998

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