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Beam-Recrystallized Device-Worthy Films of Si on SiO2 via Control of the Grain Boundary Location

Published online by Cambridge University Press:  22 February 2011

J.P. Colinge ,
D. Bensahel ,
M. Alamome ,
M. Haond  and
C. Leguet
J.P. Colinge
Affiliation:
Centre National d'Etudes des Té1écommunications, B.P. 98, 38243 Meylan-Cedex, France
D. Bensahel
Affiliation:
Centre National d'Etudes des Té1écommunications, B.P. 98, 38243 Meylan-Cedex, France
M. Alamome
Affiliation:
Centre National d'Etudes des Té1écommunications, B.P. 98, 38243 Meylan-Cedex, France
M. Haond
Affiliation:
Centre National d'Etudes des Té1écommunications, B.P. 98, 38243 Meylan-Cedex, France
C. Leguet
Affiliation:
Centre National d'Etudes des Té1écommunications, B.P. 98, 38243 Meylan-Cedex, France
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Abstract

Device-worthy films of silicon on SiO2 have been produced using laser annealing and antireflection stripes. If no seeding is used, grain boundaries will be localized beneath the stripes; with seeding, large-area single crystals can be grown, of uniform <100> orientation. N-channel transistors show a mobility of 620 cm2/V.s and present leakage currents which can be reduced, however, down to a few pA/um when the substrate (back gate) is negatively biased to − 5 V. Ring oscillators have also been made, which oscillate with a delay per stage of 1 nsec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 597
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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