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Beam Shaping for Cw Laser Recrystallization of Polysilicon Films

Published online by Cambridge University Press:  15 February 2011

P. Zorabedian ,
C.I. Drowley ,
T.I. Kamins  and
T.R. Cass
P. Zorabedian
Affiliation:
Hewlett-Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304
T.I. Kamins
Affiliation:
Hewlett-Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304
T.R. Cass
Affiliation:
Hewlett-Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304
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Abstract

A shaped laser beam has been used for laterally seeded recrystallization of polysilicon films over oxide. Direct maps of the shaped-beam intensity distribution in the wafer plane are correlated with the grain structure of the recrystallized polysilicon. Using 60% overlapping of shaped-beam scans along <100> directions, we have obtained seeded areas one mm wide and 50 to 500μm long. These consist of 40μm-wide adjacent single-crystal strips regularly separated by low-angle grain boundaries extending laterally away from the seed openings. The spacing between grain boundaries is equal to the scan spacing, providing a means for controlling the location of grain boundaries in otherwise defect-free, single-crystal films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 523
Copyright
Copyright © Materials Research Society 1983

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References

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