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Beam Induced Lateral Epitaxy of GaAs on a GaAs/Si Template

Published online by Cambridge University Press:  26 February 2011

Shigeya Naritsuka ,
Koji Saitoh ,
Toshiyuki Kondo  and
Takahiro Maruyama
Shigeya Naritsuka
Affiliation:
Meijo University, Dept. of Materials Science and Engineering, Nagoya, 468–8502 Japan Meijo University, 21st century COE program “NANO FACTORY”
Koji Saitoh
Affiliation:
Meijo University, Dept. of Materials Science and Engineering, Nagoya, 468–8502 Japan
Toshiyuki Kondo
Affiliation:
Meijo University, Dept. of Materials Science and Engineering, Nagoya, 468–8502 Japan
Takahiro Maruyama
Affiliation:
Meijo University, Dept. of Materials Science and Engineering, Nagoya, 468–8502 Japan Meijo University, 21st century COE program “NANO FACTORY”
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Abstract

Beam induced lateral epitaxy (BILE) on truncated ridges was applied to the heteroepitaxial growth of GaAs on a Si substrate. A GaAs buffer layer was formed on the Si substrate, and then this GaAs/Si template was used as a substrate for the BILE process. As a result, overgrown regions of GaAs of widths as large as 6.5 μm were grown laterally from the sides of the truncated ridges. The growth regions had a flat, smooth top surface consisting of a (111) facet. Although stacking faults from the GaAs/Si template remained in the growth region, which are unfavorable for device applications, the lateral grown region has no dislocations. Thus, the BILE method is useful for reducing dislocations in heteroepitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B9.30
Copyright
Copyright © Materials Research Society 2005

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References

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