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Beam Induced Lateral Epitaxy: a new way to Lateral Growth in Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Shigeya Naritsuka ,
Koji Saitoh ,
Takashi Suzuki  and
Takahiro Maruyama
Shigeya Naritsuka
Affiliation:
Meijo University, Dept. of Materials Science and Engineering, Nagoya, 468–8502 Japan Meijo University, 21st century COE program “NANO FACTORY”
Koji Saitoh
Affiliation:
Meijo University, Dept. of Materials Science and Engineering, Nagoya, 468–8502 Japan
Takashi Suzuki
Affiliation:
Meijo University, Dept. of Materials Science and Engineering, Nagoya, 468–8502 Japan
Takahiro Maruyama
Affiliation:
Meijo University, Dept. of Materials Science and Engineering, Nagoya, 468–8502 Japan Meijo University, 21st century COE program “NANO FACTORY”
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Extract

We developed a new technique of epitaxial lateral growth without using oxide masks called beam induced lateral epitaxy (BILE). In this technique, molecular beams are directed at a nearly glancing angle with respect to a substrate that has pre-fabricated truncated ridges. By using BILE we grew GaAs laterally from the side of ridges on a GaAs substrate. The growth behavior of BILE strongly depended on both incident angle of the Ga beam and the crystal orientation of the truncated ridges. The formation of facets on the lateral growth front controlled the grown shape of the layers. By using a (111) B substrate with BILE, we grew a smooth, flat (111) B facet on the top of the layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z2.4
Copyright
Copyright © Materials Research Society 2004

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References

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