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Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs

Published online by Cambridge University Press:  15 February 2011

Shean-Yih Chiu ,
A. F. M. Anwar  and
Shangli Wu
Shean-Yih Chiu
Affiliation:
Electrical and Systems Engineering Department, University of Connecticut, CT 06269, [email protected]
A. F. M. Anwar
Affiliation:
Electrical and Systems Engineering Department, University of Connecticut, CT 06269, [email protected]
Shangli Wu
Affiliation:
Electrical and Systems Engineering Department, University of Connecticut, CT 06269, [email protected]
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Abstract

Base transit time, τb, in abrupt npn GaN/InGaN/GaN and AlGaN/GaN/AlGaN double heterojunction bipolar transistors (DHBTs) is reported. Base transit time strongly depends not only on the quasi-neutral base width, but also on the low field electron mobility, μn, in the neutral base region and the effective electron velocity, Sc, at the edge of base-collector heterojunction. μn and Sc are temperature-dependent parameters. A unity gain cut-off frequency of 10.6 GHz is obtained in AlGaN/GaN/AlGaN DHBTs and 19.1 GHz in GaN/InGaN/GaN DHBTs for a neutral base width of 0.05um. It is also shown that non-stationary transport is not required to study τb for neutral base width in the range of 0.05um for GaN-based HBTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.7
Copyright
Copyright © Materials Research Society 1999

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References

[1] Pankove, J., Chang, S. S., Lee, H. C. and Molnar, R. J., TEDM, 389 (1994)Google Scholar
[2] Mohammad, S. N. and Morkoc, H., J. Appl. Phys., 78, 4200 (1995)Google Scholar
[3] Kroemer, H., Solid-State Electron., 28, 1101 (1985)Google Scholar
[4] Roulston, D. J., IEEE Electron Device Lett., 11, 88 (1990)Google Scholar
[5] Hafizi, M., Streit, D. C., Tran, L. T., Kobayashi, K. W., Umemoto, D. K., Oki, A. K., and Wang, S. K., IEEE Electron Device Lett., 12, 581 (1991)Google Scholar
[6] Jahan, M. M. and Anwar, A. F. M., Solid-State Electron., 39, 133 (1996)Google Scholar
[7] Jahan, M. M. and Anwar, A. F. M., Solid-State Electron., 39, 941 (1996)Google Scholar
[8] Koida, Y., Itoh, H., Khan, M. R. H., Hiramatsu, K., Sawaki, N., and Akasaki, I., J. Appl. Phys. 61, 4540 (1987)Google Scholar
[9] Parikh, C. D. and Lindholm, F. A., IEEE Trans. on Electron Devices, 39, 1303 (1992)Google Scholar
[10] Khan, M. A., Skogman, R. A., Hove, J. M. Van. Krishanakutty, S., and Kolbas, R. M., Appl. Phys. Lett. 56, 1257 (1991)Google Scholar
[11] Morkoc, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., and Burns, M., J. Appl. Phys. 76, 1363 (1994)Google Scholar
[12] Jenkins, D. W. and Dow, J. D., Phys. Rev. B39, 3317 (1992)Google Scholar
[13] Shur, M. S. and Khan, M. A., MRS Bulletin. 44, 1997 Google Scholar
[14] Dmitriev, A. and Oruzheinikov, A., Internat. Symp. on Blue Lasser and Light Emitting Diodes, 360 (1996)Google Scholar
[15] Webster, Richard T. and Anwar, A. F. M., MRS, Symp. Proc., 482, 929, Boston, 1997 Google Scholar
[16] Wu, S., Webster, Richard T. and Anwar, A. F. M., Proc. 1997 International Semicond. Device Research Symp., 385, University of Virginia, 1997 Google Scholar