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Barrier Layer Morphological Stability and Adhesion to PorousLow-κ Dielectrics

Published online by Cambridge University Press:  17 March 2011

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Abstract

Two particularly important reliability issues facing the integration of low-κ dielectric films are the fracture energy of the barrier-dielectricinterface and the barrier layer integrity during processing. We have noticedthat the compressive stresses in the barrier layers on low- κ dielectricslead to spontaneous delamination and formation of telephone-cord likemorphologies. These morphologies allow the measurement of fracture energyand are advantageous over artificially contrived features to yield realisticdebonding parameters. The fracture energy of common barrier films, TaN andTa, was determined using this method for varying porosity nanoporous silicaand MSQ. Detailed characterization of the telephone cord morphology using acombination of Optical Microscopy, SEM and Profilometry was done. Thefracture energy for Ta on different low-κ dielectrics was evaluated using a1-D model for straight buckles. The kinetic coefficient of buckling was alsoevaluated.

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Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F3.12
Copyright
Copyright © Materials Research Society 2004

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