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Band Gap Opening of Graphene after UV/Ozone and Oxygen Plasma Treatments

Published online by Cambridge University Press:  01 March 2011

Adrianus I. Aria ,
Adi W. Gani  and
Morteza Gharib
Adrianus I. Aria
Affiliation:
Graduate Aeronautical Laboratories, California Institute of Technology, Pasadena, California 91125, USA
Adi W. Gani
Affiliation:
Electrical Engineering, California Institute of Technology, Pasadena, California 91125, USA
Morteza Gharib
Affiliation:
Graduate Aeronautical Laboratories, California Institute of Technology, Pasadena, California 91125, USA
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Abstract

Graphene grown by Chemical Vapor Deposition (CVD) on nickel subsrate is oxidized by means of oxygen plasma and UV/Ozone treatments to introduce bandgap opening in graphene. The degree of band gap opening is proportional to the degree of oxidation on the graphene. This result is analyzed and confirmed by Scanning Tunnelling Microscopy/Spectroscopy and Raman spectroscopy measurements. Compared to conventional wet-oxidation methods, oxygen plasma and UV/Ozone treatments do not require harsh chemicals to perform, allow faster oxidation rates, and enable site-specific oxidation. These features make oxygen plasma and UV/Ozone treatments ideal candidates to be implemented in high-throughput fabrication of graphene-based microelectronics.

Keywords

oxidationscanning tunneling microscopy (STM)Raman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1284: Symposium C – Fundamentals of Low-Dimensional Carbon Nanomaterials , 2011 , mrsf10-1284-c09-04
Copyright
Copyright © Materials Research Society 2011

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