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Band Edge Optical Absorption of Molecular Beam Epitaxial GaSb Grown on Semi-Insulating GaAs Substrate

Published online by Cambridge University Press:  22 February 2011

M. Shah ,
M.O. Manasreh ,
R. Kaspi ,
M. Y. Yen ,
B. A. Philips ,
M. Skowronski  and
J. Shinar
M. Shah
Affiliation:
Air Force Institute of Physics, AFIT/CTRD, Wright-Patterson AFB, OH 45433
M.O. Manasreh
Affiliation:
Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433
R. Kaspi
Affiliation:
Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433
M. Y. Yen
Affiliation:
Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433
B. A. Philips
Affiliation:
Materilas Engineering Department, Carnegie-Mellon University, Pittsburgh, PA 15213
M. Skowronski
Affiliation:
Materilas Engineering Department, Carnegie-Mellon University, Pittsburgh, PA 15213
J. Shinar
Affiliation:
Ames Laboratory and Physcis laboratory, Iowa State University, Ames, IA 50011
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Abstract

The optical absorption of the band edge of GaSb layers grown on semi-insulating GaAs substrates by the molecular beam epitaxy (MBE) technique is studied as a function of temperature. A free exciton absorption peak at 0.807 eV was observed at 10 K. The free exciton line is observed in either thick samples (5μm thick) or samples with ∼0.1 μm thick AlSb buffer layers. The latter samples suggest that the AlSb buffer layer is very effective in preventing some of the dislocations from propagating into the MBE GaSb layers. The fitting of the band gap of the GaSb layers as a function of temperature gives a Debye temperature different than that of the bulk GaSb calculated from the elastic constants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 449
Copyright
Copyright © Materials Research Society 1994

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