Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-19T06:55:04.193Z Has data issue: false hasContentIssue false
  • English
  • Français

Ballistic-Electron-Emission Microscopy (BEEM) Studies of Gainp/GaAs Heterostructures

Published online by Cambridge University Press:  10 February 2011

J. J. O'Shea ,
C. M. Reaves ,
M. A. Chin ,
S. P. Denbaars ,
A. C. Gossard ,
V. Narayanamurti  and
E. D. Jones
J. J. O'Shea
Affiliation:
Materials Department
C. M. Reaves
Affiliation:
Materials Department
M. A. Chin
Affiliation:
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
S. P. Denbaars
Affiliation:
Materials Department Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
A. C. Gossard
Affiliation:
Materials Department Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106
V. Narayanamurti
Affiliation:
Materials Department
E. D. Jones
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
Get access

Abstract

Ballistic-electron-emission microscopy (BEEM) has been used to study band-offsets in n-and p-type GaInP/GaAs heterostructures. We determine room temperature offsets of 30 meV and 350 meV in the conduction and valence bands, respectively, for thin GaInP layers grown by metal-organic chemical vapor deposition (MOCVD) at 610°C. Low temperature (77 K) measurements also indicate at least 90% of the band discontinuity lies in the valence band for these ordered GaInP samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 79
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Kodama, K., Hoshino, M., Kitahara, K., Takikawa, M., and Ozeki, M., Jpn. J. Appl. Phys. 25, L127 (1986).Google Scholar
[2] Rao, M. A., Caine, E. J., Kroemer, H., Long, S. I., and Babic, D. I., J. Appl. Phys. 61, 643 (1987).Google Scholar
[3] Watanabe, M. O. and Ohba, Y., Appl. Phys. Lett. 50,906 (1987).Google Scholar
[4] Kobayashi, T., Taira, K., Nakamura, F., and Kawai, H., J. Appl. Phys. 65,4898 (1989).Google Scholar
[5] Masselink, W. T., Zachau, M., Hickmott, T. W., and Hendrickson, K., J. Vac. Sci. Technol. B 10, 966 (1992).Google Scholar
[6] Biswas, D., Debbar, N., Bhattacharya, P., Razeghi, M., Defour, M., and Omnes, F., Appl. Phys. Lett. 56, 833 (1990).Google Scholar
[7] Haase, M. A., Hafich, M. J., and Robinson, G. Y., Appl. Phys. Lett. 58,616 (1991).Google Scholar
[8] Chen, J., Sites, J. R., Spain, I. L., Hafich, M. J., and Robinson, G. Y., Appl. Phys. Lett. 58, 744 (1991).Google Scholar
[9] Lee, T. W., Houston, P. A., Kumar, R., Yang, X. F., Hill, G., Hopkinson, M., and Claxton, P. A., AppI. Phys. Lett. 60,474 (1992).Google Scholar
[10] Arnaud, G., Boring, P., Gil, B., Garcia, J.-C., Landesman, J.-P., and Leroux, M., Phys. Rev.B 46, 1886 (1992).Google Scholar
[11] Gomyo, A., Suzuki, T., and Iijima, S., Phys. Rev. Lett. 60, 2645 (1988).Google Scholar
[12] Wei, S.-H. and Zunger, A., Appl. Phys. Lett. 56, 662 (1990).Google Scholar
[13] Bell, L. D. and Kaiser, W. J., Phys. Rev. Lett. 61, 2368 (1988).Google Scholar
[14] O'Shea, J. J., Sajoto, T., Bhargava, S., Leonard, D., Chin, M. A., and Narayanamurti, V., J. Vac. Sci. Technol. B 12, 2625 (1994).Google Scholar
[15] Hecht, M. H., Bell, L. D., Kaiser, W. J. and Davis, L. C., Phys. Rev. B 42, 7663 (1990).Google Scholar
[16] Heimbuch, M., Holmes, A. L., Jr., Reaves, C. M., DenBaars, S. P. and Coldren, L. A., J.Electron. Mater. 23, 87 (1994).Google Scholar
[17] Bhargava, S., Sajoto, T., O'Shea, J. J., Leonard, D., Chin, M. A., and Narayanamurti, V., Fifth BEEM Workshop, Mohonk, New York, 1994; V. Narayanamurti, SPIE Proceedings 2397, 125 (1995).Google Scholar
[18] The order parameter of GaInP is defined by the composition of the alternating Ga- and In-rich planes. Ordered GaInP consists of a superlattice of Ga1+η In1−ηP2 and Ga1−η In1+η P2 monolayers along a [111]-direction.Google Scholar
[19] DeLong, M. C., Mowbray, D. J., Hogg, R. A., Skolnick, M. S., Williams, J. E., Meehan, K., Kurtz, S. R., Olson, J. M., Schneider, R. P., Wu, M. C. and Hopkinson, M., Appl. Phys. Lett. 66, 3185 (1995).Google Scholar
[20] Ernst, P., Geng, C., Scholz, F., Schweizer, H., Zhang, Y. and Mascarenhas, A., Appl. Phys. Lett. 67, 2347 (1995).Google Scholar