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Atomic-Scale Physics and Modeling of Schottky Barrier Effect in Carbon Nanotube Nanoelectronics

Published online by Cambridge University Press:  01 February 2011

Yongqiang Xue
Yongqiang Xue*
Affiliation:
College of Nanoscale Science and Engineering, University at Albany, State University of New York, Albany, New York 12203
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Abstract

We present an atomistic self-consistent study of the electronic and transport properties of semiconducting carbon nanotubes in contact with metal electrodes at different contact geometries. We analyze the Schottky barrier effect at the metal-nanotube interface by examining the electrostatics, the band line up and the conductance of the metal-nanotube wire-metal junction as a function of the nanotube channel length, which leads to an effective decoupling of interface and bulk effects in electron transport through nanotube junction devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 858: Symposium HH – Functional Carbon Nanotubes , 2004 , HH7.3
Copyright
Copyright © Materials Research Society 2005

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References

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