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Atomic-Layer Deposition of ZrO2 Thin Films Using New Alkoxide Precursors

Published online by Cambridge University Press:  01 February 2011

Anthony C. Jones ,
Paul A. Williams ,
John L. Roberts ,
Timothy J. Leedham ,
Hywel O. Davies ,
Raija Matero ,
Mikko Ritala  and
Markku Leskelä
Anthony C. Jones
Affiliation:
Department of Chemistry, University of Liverpool, Liverpool, L69 7ZD, UK Inorgtech Limited, 25 James Carter Road, Mildenhall, Suffolk, IP28 7DE, UK
Paul A. Williams
Affiliation:
Department of Chemistry, University of Liverpool, Liverpool, L69 7ZD, UK Inorgtech Limited, 25 James Carter Road, Mildenhall, Suffolk, IP28 7DE, UK
John L. Roberts
Affiliation:
Department of Chemistry, University of Liverpool, Liverpool, L69 7ZD, UK
Timothy J. Leedham
Affiliation:
Inorgtech Limited, 25 James Carter Road, Mildenhall, Suffolk, IP28 7DE, UK
Hywel O. Davies
Affiliation:
Inorgtech Limited, 25 James Carter Road, Mildenhall, Suffolk, IP28 7DE, UK
Raija Matero
Affiliation:
Department of Chemistry, PO Box 55, FIN-00014, University of Helsinki, Finland
Mikko Ritala
Affiliation:
Department of Chemistry, PO Box 55, FIN-00014, University of Helsinki, Finland
Markku Leskelä
Affiliation:
Department of Chemistry, PO Box 55, FIN-00014, University of Helsinki, Finland
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Abstract

Atomic layer deposition is a promising technique for the deposition of ZrO2 thin films for high-k gate dielectric applications. However, there are a number of problems associated with existing Zr precursors such as ZrCl4 and [Zr(OBut)4]. In this paper, we examine the ALD of ZrO2 using the new alkoxide complexes, [Zr(OBut)2(dmae)2], [Zr(OPr1)2(dmae)2] and [Zr(dmae)4] (dmae = [OCH2CH2NMe2]), and compare the results with data obtained using [Zr(OBut)4].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B3.5
Copyright
Copyright © Materials Research Society 2002

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