Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-29T07:47:39.792Z Has data issue: false hasContentIssue false
  • English
  • Français

The Atomic Structure of Extended Defects in GaN

Published online by Cambridge University Press:  03 September 2012

P. Ruterana  and
G. Nouet
P. Ruterana
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, UPRESA 6004 CNRS, Institut des Sciences de la Matière et du Rayonnement, 6 Bd Maréchal Juin, 14050 Caen Cedex, France. email: [email protected]
G. Nouet
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, UPRESA 6004 CNRS, Institut des Sciences de la Matière et du Rayonnement, 6 Bd Maréchal Juin, 14050 Caen Cedex, France
Get access

Abstract

GaN layers contain large densities (1010 cm−2) of threading dislocations, nanopipes, (0001) and { 1120 } stacking faults, and { 1010 } inversion domains. Three configurations have been found for pure edge dislocations, mainly inside high angle grain boundaries where the 4 atom ring cores can be stabilized. Two atomic configurations, related by a 1/6 < 1010 > stair rod dislocation, have been observed for the { 1120 } stacking fault in (Ga-Al)N layers. For the {1010} inversion domain boundaries, a configuration corresponding to the Holt model was observed, as well as another with no N-N or Ga-Ga bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W5.4
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Amano, H., Kito, M., Hiramatsu, K., Aksaki, I., 1989, Jpn. J. Appl. Phys. 28, L2112.Google Scholar
2. Ponce, F.A., Major, S.J., Plano, W.E., and Welch, D.F., 1994, Appl. Phys. Lett. 65, 2302 Google Scholar
3. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Mitsushita, T., Kiyoku, H., and Sugimoto, Y., 1996, Jpn. J. Appl. Phys. 35, L74.Google Scholar
4. Lester, S.D., Ponce, F.A., Crawford, M.G., and Steigewald, D.A., 1995, Appl. Phys. Lett., 66, 1249.Google Scholar
5. Vermaut, P., Ruterana, P., Nouet, G., Salvador, A., Botchkarev, A., and Morkoç, H., 1995, Inst. Phys. Conf. Ser., 146, 289.Google Scholar
6. Rouvière, J.L., Arlery, M., and Bourret, A., 1997, Inst. Phys. Conf. Ser. 157, 173.Google Scholar
7. Tanaka, S., Kern, R.S., and Davis, R.F., 1995, Appl. Phys. Lett. 66, 37.Google Scholar
8. Sverdlov, B.N., Martin, G.A., Morkoç, H. and Smith, D.J., 1995, Appl. Phys. Lett. 67, 2063.Google Scholar
9. Rouvière, J.L., Arlery, M., Niebuhr, R., and Bachem, K., 1995, Inst. Phys. Conf. Ser. 146, 285.Google Scholar
10. Vermaut, P., Ruterana, P., Nouet, G., and Morkoç, H., 1997, Philos. Mag. A75, 239.Google Scholar
11. Vermaut, P., Ruterana, P., Nouet, G., 1997, Philos. Mag. A76, 1215.Google Scholar
12. Vermaut, P., Ruterana, P., Nouet, G., Salvador, A., and Morkoç, H., 1997, Inst. Phys. Conf. Ser., 157, 183.Google Scholar
13. Ruterana, P., Potin, V., Béré, A., Barbaray, B., Nouet, G., Hairie, A., Paumier, E., Salvador, A., Botchkarev, A., and Morkoç, H., Phys. Rev. 1999, B59, 15917–15925Google Scholar
14. Xin, Y., Pennycook, S.J., Browing, N.D., Nellist, P.D., Sivanathan, S., Beaumont, B., Faurie, J.P. and Gibart, P., 1998, Mat. Res. Symp. Proc. 482, 781.Google Scholar
15. Potin, V., Ruterana, P., Nouet, G., Pond, R.C., and Morkoç, H.,Phys. Rev. B, 61, in pressGoogle Scholar
16. Vermaut, P., Ruterana, P., Nouet, G., Salvador, A., and Morkoç, H., 1996, MRS Int. J. Nitride Res. 1, 42 Google Scholar
17. Ruterana, P., Vermaut, P., Nouet, G., Botchkarev, A., Salvador, A. and Morkoç, H., 1997, Mater. Sci. Eng. B50, 72.Google Scholar
18. Drum, C.M., 1965, Philos. Mag. A11, 313.Google Scholar
19. Blank, H., Delavignette, P., Gevers, R., and Amelinckx, S., 1964, Phys. Stat. Solid 7, 747.Google Scholar
20. Ponce, F.A., Bour, D.P., Götz, W., Johnson, N.M., Helava, H.I., Grezgory, I., Jun, J. and Porowski, S., 1996, Appl. Phys. Lett. 68, 917 Google Scholar
21. Potin, V., Nouet, G., and Ruterana, P., 1999, Appl. Phys. Lett. 74, 947.Google Scholar
22. Northrup, J.E., Neugebauer, J., and Romano, L.T., 1996, Phys. Rev. Lett. 77, 103.Google Scholar
23. Potin, V., Ruterana, P., and Nouet, G., 1997, J. Appl. Phys. 82, 1276 Google Scholar
24. Holt, D.B., 1969, J. Phys. Chem. Solids 30, 1297 Google Scholar