No CrossRef data available.
Article contents
Atomic Structure of Dislocations and Dipoles in Silicon
Published online by Cambridge University Press: 26 February 2011
Abstract
Dislocations of a/2<110> Burgers vectors lying in {001} and {111} planes in the form of cross-grids are often observed in ion implanted and thermally annealed specimens. In order to asses the mechanism of formation of these dislocations, we have calculated energies and determined atomic core structuresof a/2<110>{001} edge dislocations and their dipoles,and of a/2<110>{111} dislocations in silicon by minimizing the total configurational energy.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1988