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Atomic Structure Impacts on Dielectric and Mechanical Properties of Hydrogen-Silsesquioxane During Thermal Processing

Published online by Cambridge University Press:  10 February 2011

Youfan Liu  and
Fred Dall
Youfan Liu
Affiliation:
Dow Coming Corporation, M/S CO41B1, P. O. Box 944, Midland, MI 48686.
Fred Dall
Affiliation:
Dow Coming Corporation, M/S CO41B1, P. O. Box 944, Midland, MI 48686.
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Abstract

Atomic structure impacts on the dielectric and mechanical properties of hydrogen-silsesquioxane (HSQ) were investigated to determine the sensitivity of HSQ to Si-H bond degradation during thermal processing. It was demonstrated that the dielectric properties of HSQ films are not sensitive to Si-H bond degradation up to 50 % if polar silanol or water species are not induced during thermal processing at a temperature of ≤ 450 °C. However, as the Si-H bond density is reduced, the mechanical properties are changed due to the increasingly formed Si-O-Si networks. This provides an opportunity for tuning mechanical properties per application requirements by process optimization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 565: Symposium O – Low-Dielectric Constant Materials V , 1999 , 267
Copyright
Copyright © Materials Research Society 1999

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