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Atomic Level Investigations of W-Si Multilayers by High Resolution Tem and X Ray Scattering

Published online by Cambridge University Press:  25 February 2011

S. R Nutt  and
J. E. Keem
S. R Nutt
Affiliation:
Brown University, Providence, RI 02910
J. E. Keem
Affiliation:
Ovonic Synthetic Materials Co., Inc., 1788 Northwood Drive, Troy, MI 48084
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Abstract

We have prepared multilayer films of W-Si with bilayer repeat spacing from approximately 1.5 nm to 9 nm and performed high resolution electron microscopy and low angle x-ray scattering on them. Average composition estimates as inferred from deposition conditions, x ray scattering and electron microscopy are compared. Determinations of the individual layer thickness ratios by electron microscopy and x ray scattering vary significantly from expectations as the bilayer thickness approaches 1.5 nm. Layer intermixing to increase as the bilayer thickness decreases. Composition profiles as inferred from the Cuk x ray profile are compared to those inferred from the high resolution electron micrographs. Visual observations from melectron microscopy are presented indicating that the interface roughness is rapidly damped in the W-Si multilayer system. Estimates of the layer uniformity are made from the high resolution images.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987 , 87
Copyright
Copyright © Materials Research Society 1988

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References

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