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Atomic Layer Epitaxy of GaAs on Ge Substrates

Published online by Cambridge University Press:  25 February 2011

J. Ramdani ,
B.T. Mcdermott  and
S.M. Bedair
J. Ramdani
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911
B.T. Mcdermott
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911
S.M. Bedair
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911
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Abstract

We report on the low temperature growth of GaAs on Ge substrates using Atomic Layer Epitaxy. Low temperature deposition has resulted in substantial reduction of the outdiffusion of Ge into the GaAs epilayer as being indicated from SIMS. The I-V characteristics of the GaAs/Ge heterojunction were thyristor like or near abrupt depending on the growth temperature. We also report on the use of the Atomic Layer Epitaxy self-limiting adsorption process of TMGa to control the diffusion of Ga into Ge substrates at the monolayer level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 647
Copyright
Copyright © Materials Research Society 1990

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References

1 Jadus, D.K. and Feutcht, D.L., IEEE Transaction on Electron Devices, vol. ED–16, No. 1, 102 (1960).Google Scholar
2 Tobin, S.P., Vernon, S.H., Bojgar, C., Haven, V.E., Geoffroy, L.M. and Lillington, D.R., IEEE Electron Device Letters, vol. 9, No. 5, 256 (1988).Google Scholar
3 Abdul Awal, M., Hang Lee, El, and Chan, Eric Y., Mat. Res. Soc. Symp. Proceedings, Vol. 91, 241 (1987).Google Scholar
4 Bedair, S.M., Tischler, M.A., Katsuyama, T. and El-Masry, N.A., Appl. Phys. Lett., 47, 51 (1985).Google Scholar
5 Tischler, M.A. and Bedair, S.M., Appl. Phys. Lett., 48, 1681 (1986).Google Scholar
6 Tischler, M.A. and Bedair, S.M., J. Crystal Growth, 77, 89 (1986).Google Scholar
7 Bedair, S.M., McDermott, B.T., Ide, Y., Karam, N.H., Hashemi, M., Tischler, M.A., Timmons, M., Tarn, J.L.L. and El-Masry, N.A., J. Crystal Growth, 93, 182 (1988).Google Scholar
8 Chand, N., Klem, J., Henderson, T. and Morkoc, H., J. App. Phys., 59, 3601 (1986).Google Scholar